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2D0N60P даташитФункция этой детали – «Khb2d0n60p». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
2D0N60P | KEC |
KHB2D0N60P SEMICONDUCTOR
TECHNICAL DATA
General Description
KHB2D0N60P/F/F2
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB2D0N60P
A O C F E G B Q I
DIM MILLIMETERS _ 0.2 9.9 + A B C D E
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES
VDSS= 600V, ID= 2.0A Drain-Source ON Resistance :
K M L J D N N
P
F G H I J
15.95 MAX 1.3+0.1/-0.05 _ 0 |
Это результат поиска, начинающийся с "2D0N60P", "2D0N" |
Номер в каталоге | Производители | Описание | |
KHB2D0N60P | KEC semiconductor |
(KHB2D0N60F/P) N-Channel MOS Field Effect Transistor
SEMICONDUCTOR
TECHNICAL DATA
KHB2D0N60P/F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics |
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KHB2D0N60P1 | KEC semiconductor |
(KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor
SEMICONDUCTOR
TECHNICAL DATA
KHB2D0N60P1/F1
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristi |
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1N2060 | Digitron Semiconductors |
HIGH POWER RECTFIERS 1N2054-1N2068
High-reliability discrete products and engineering services since 1977
HIGH POWER RECTFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb pl |
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2D0N60F | KEC |
KHB2D0N60F SEMICONDUCTOR
TECHNICAL DATA
General Description
KHB2D0N60P/F/F2
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB2D0N60P
A O C F E G B Q I
DIM MILLIMETERS _ 0.2 9.9 + A B C D E
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low g |
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2N2060 | Motorola Semiconductors |
DUAL AMPLIFIER TRANSISTOR MAXIMUM RATINGS
Rating
2N2060,A Symbol 2N2223,A 2N2480 2N2480A
Collector-Emitter Voltage Collector-Emitter Voltage
VCEO
60
40
40
VCER
80
—
-
Collector-Base Voltage
VCBO
100
75
80
Emitter-Base Voltage
VEBO
7.0
5.0
5.0
—Collector Current Continuous
ic
50 |
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2N2060 | TT |
DUAL MATCHED NPN SILICON TRANSISTOR DUAL MATCHED NPN SILICON TRANSISTOR
2N2060 / 2N2060A
• Matched Dual NPN Transistors • Low Power • Hermetically Sealed TO-77 Metal Package • High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCEO
Collector – Emi |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |