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28F008B3 даташитФункция этой детали – «Smart 3 Advanced Boot Block Byte-wide». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
28F008B3 | Intel |
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE E
n n n
PRELIMINARY
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY
28F008B3, 28F016B3
Flexible SmartVoltage Technology 2.7V–3.6V Program/Erase 2.7V–3.6V Read Operation 12V VPP Fast Production Programming 2.7V or 1.8V I/O Option Reduces Overall System Power Optimized Block Sizes Eight 8-Kbyte Blocks for Data, Top or Bottom Locations Up to Thirty-One 64-Kbyte Blocks for Code High Performance 2.7V–3.6V: 120 ns Max Access Time Block Lock |
Это результат поиска, начинающийся с "28F008B3", "28F00" |
Номер в каталоге | Производители | Описание | |
GT28F008B3B120 | Intel Corporation |
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE E
n n n
PRELIMINARY
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY
28F008B3, 28F016B3
Flexible SmartVoltage Technology 2.7V–3.6V Program/Erase 2.7V–3.6V Read Operation 12V VPP Fast Production Programming 2.7V o |
|
GT28F008B3B150 | Intel Corporation |
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE E
n n n
PRELIMINARY
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY
28F008B3, 28F016B3
Flexible SmartVoltage Technology 2.7V–3.6V Program/Erase 2.7V–3.6V Read Operation 12V VPP Fast Production Programming 2.7V o |
|
GT28F008B3T120 | Intel Corporation |
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE E
n n n
PRELIMINARY
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY
28F008B3, 28F016B3
Flexible SmartVoltage Technology 2.7V–3.6V Program/Erase 2.7V–3.6V Read Operation 12V VPP Fast Production Programming 2.7V o |
|
GT28F008B3T150 | Intel Corporation |
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE E
n n n
PRELIMINARY
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY
28F008B3, 28F016B3
Flexible SmartVoltage Technology 2.7V–3.6V Program/Erase 2.7V–3.6V Read Operation 12V VPP Fast Production Programming 2.7V o |
|
MT28F008B3 | Micron Technology |
(MT28F008B3 / MT28F800B3) FLASH MEMORY
8Mb SMART 3 BOOT BLOCK FLASH MEMORY
FLASH MEMORY
MT28F008B3 MT28F800B3
3V Only, Dual Supply (Smart 3)
FEATURES
• Eleven erase blocks: 40-Pin 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks • Smart 3 technol |
|
TE28F008B3B120 | Intel Corporation |
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE E
n n n
PRELIMINARY
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY
28F008B3, 28F016B3
Flexible SmartVoltage Technology 2.7V–3.6V Program/Erase 2.7V–3.6V Read Operation 12V VPP Fast Production Programming 2.7V o |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |