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28F008B3 даташит

Функция этой детали – «Smart 3 Advanced Boot Block Byte-wide».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
28F008B3 Intel
Intel
  SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE

E n n n PRELIMINARY SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY 28F008B3, 28F016B3 Flexible SmartVoltage Technology  2.7V–3.6V Program/Erase  2.7V–3.6V Read Operation  12V VPP Fast Production Programming 2.7V or 1.8V I/O Option  Reduces Overall System Power Optimized Block Sizes  Eight 8-Kbyte Blocks for Data, Top or Bottom Locations  Up to Thirty-One 64-Kbyte Blocks for Code High Performance  2.7V–3.6V: 120 ns Max Access Time Block Lock
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Это результат поиска, начинающийся с "28F008B3", "28F00"

Номер в каталоге Производители Описание PDF
GT28F008B3B120 Intel Corporation
Intel Corporation

SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE

E n n n PRELIMINARY SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY 28F008B3, 28F016B3 Flexible SmartVoltage Technology  2.7V–3.6V Program/Erase  2.7V–3.6V Read Operation  12V VPP Fast Production Programming 2.7V o
pdf
GT28F008B3B150 Intel Corporation
Intel Corporation

SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE

E n n n PRELIMINARY SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY 28F008B3, 28F016B3 Flexible SmartVoltage Technology  2.7V–3.6V Program/Erase  2.7V–3.6V Read Operation  12V VPP Fast Production Programming 2.7V o
pdf
GT28F008B3T120 Intel Corporation
Intel Corporation

SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE

E n n n PRELIMINARY SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY 28F008B3, 28F016B3 Flexible SmartVoltage Technology  2.7V–3.6V Program/Erase  2.7V–3.6V Read Operation  12V VPP Fast Production Programming 2.7V o
pdf
GT28F008B3T150 Intel Corporation
Intel Corporation

SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE

E n n n PRELIMINARY SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY 28F008B3, 28F016B3 Flexible SmartVoltage Technology  2.7V–3.6V Program/Erase  2.7V–3.6V Read Operation  12V VPP Fast Production Programming 2.7V o
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MT28F008B3 Micron Technology
Micron Technology

(MT28F008B3 / MT28F800B3) FLASH MEMORY

8Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F008B3 MT28F800B3 3V Only, Dual Supply (Smart 3) FEATURES • Eleven erase blocks: 40-Pin 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks • Smart 3 technol
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TE28F008B3B120 Intel Corporation
Intel Corporation

SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE

E n n n PRELIMINARY SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY 28F008B3, 28F016B3 Flexible SmartVoltage Technology  2.7V–3.6V Program/Erase  2.7V–3.6V Read Operation  12V VPP Fast Production Programming 2.7V o
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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