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Datasheet 1SV237 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1SV237 | DIODE (VHF~UHF BAND RF ATTENUATOR APPLICATIONS) TOSHIBA Diode Silicon Epitaxial Pin Type
1SV237
VHF~UHF Band RF Attenuator Applications
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage Forward current Junction temperature Storage temperature range
Symbol
VR IF Tj Tstg
Rating
50 50 125 -55~125
Unit
V mA °C °C
1SV237
Unit: mm
E |  Toshiba Semiconductor | diode |
1SV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1SV100 | SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE Toshiba Semiconductor diode | | |
| 2 | 1SV101 | VARIABLE CAPACITANCE DIODE (FM TUNER APPLICATIONS) Toshiba Semiconductor diode | | |
| 3 | 1SV102 | VARIABLE CAPACITANCE DIODE (AM RADIO BAND TUNING APPLICATIONS) Toshiba Semiconductor diode | | |
| 4 | 1SV103 | Variable Capacitance Diode/ FM Radio Band Tuning Applications Toshiba Semiconductor diode | | |
| 5 | 1SV121 | Silicon Epitaxial Planar PIN Diode ADE-208-399(Z)
1SV121 Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
Rev. 0 Oct. 1995 Features
Outline
• Low capacitance.(C=0.7pF max) • Small glass package (MHD) enables easy mounting and high reliability.
1
1
2 Cathode band
Ordering Information
Type  Hitachi Semiconductor diode | | |
| 6 | 1SV123 | VARIABLE CAPACITANCE DIODE Toshiba Semiconductor diode | | |
| 7 | 1SV128 | DIODE (VHF~UHF BAND RF ATTENUATOR APPLICATIONS) Toshiba Semiconductor diode | |
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