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1SS184 даташитФункция этой детали – «Switching Diodes». |
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Номер в каталоге | Производители | Описание | |
1SS184 | WILLAS |
Ultra High Speed Switching Diode WILLAS
Ultra High Speed Switching
Application
1SS184
Featrues Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) We declare that the material of product
compliance with RoHS requirements. RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H"
Device Marking
1SS184 = B3
Maximum Ratings (TA = 25°C)
Characteristic
Symbol
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward curren |
|
1SS184 | WEJ |
DIODE RoHS
1SS184 SWITCHING DIODE
SOT-23 Plastic-Encapsulate DIODE
DFeatures TPower dissipation
PD : 150 mW (Tamb=25oC)
.,LForward Current IF : 100 mA Reverse Voltage
VR : 80V
OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC
1
1.
2.4 1.3
SOT-23
3
2
ONIC CMarking:B3
2.9 1.9 0.95 0.95 0.4
Unit:mm
TRELECTRICAL CHARACTERISTICS o
C(Ta=25 C unless otherwise specified)
Parameter
Symbol
EReverse breakdown voltage
V(BR)
LReverse Voltage leakage current
IR
EForward Voltage JDiode Capacitanc |
|
1SS184 | WEITRON |
Surface Mount Switching Diodes Surface Mount Switching Diodes
P b Lead(Pb)-Free
Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications
Mechanical Data: * Case: SOT-23, Molded Plastic * Terminals: Solderable per MIL-STD-202, Method 208 * Polarity: See diagram * Weight: 0.008 grams
SOT-23 Outline Dimensions
1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226
SWITCHING DIODE 100m AMPERES 80 VOLTS
3 1
2
SOT-23
Unit:mm
A
TOP VIEW
BC
E GD H
K L
J
Dim |
|
1SS184 | Toshiba Semiconductor |
SILICON EPITAXIAL PLANAR DIODE TOSHIBA Diode Silicon Epitaxial Planar Type
1SS184
1SS184
Ultra High-Speed Switching Applications
Unit: mm
z Small package: SC-59 z Low forward voltage: VF (3) = 0.9 V (typ.) z Fast reverse recovery time: trr = 1.6 ns (typ.) z Small total capacitance: CT = 0.9 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation
VRM VR IFM IO IFSM P
85 80 |
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1SS184 | SEMTECH |
SILICON EPITAXIAL PLANAR DIODE 1SS184
SILICON EPITAXIAL PLANAR DIODE
Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance
Applications • Ultra high speed switching application
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 100 mA Reverse Current a |
|
1SS184 | RECTRON |
SWITCHING DIODE RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 SWITCHING DIODE
1SS184
FEATURES
* Power dissipation PD: 150 mW(Tamb=25OC)
* Forward current IF: 100 mA
* Reverse voltage VR: 80 V
* Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherw |
|
1SS184 | MCC |
High Speed Switching Diodes MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
1SS184
Features
x Low Forward Voltage
x Low Leakage Current
x Surface Mount SOT-23 Package
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
Pin Configuration Top View
B3
150mW High Speed Switching Diodes
80 Volt
SOT-23
A D
Maximum Ratings
Parameter
Non-Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Output Cur |
|
1SS184 | LGE |
Switching Diodes 1.ANODE 2. ANODE 3. CATHODE
Features
Low forward voltage
: VF(3)=0.9V(typ.)
Fast reverse recovery time : trr=1.6ns(typ.)
MARKING: B3
Maximum Ratings @TA=25℃
Parameter Non-Repetitive Peak reverse voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Power Dissipation Junction temperature Storage temperature range
Symbol VRM VR IFM IO PD TJ TSTG
1SS184
Switching Diodes
SOT-23
Dimensions in inches and (millimeters)
Limits 85 80 300 100 150 125
-55-125
Unit V V mA mA
mW |
[1]  [2]
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |