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1N914 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
69 1N914   Fast Switching Diodes

1N914 Vishay Telefunken Fast Switching Diodes Features D D D D Fast switching speed High reliability High conductance For general purpose switching applications 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Non repetitive peak reverse voltage Repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage RMS Reverse voltage Forward current Average rectified current Test Conditions Symbol VRM VRRM VRWM VR VR(RMS) IF IFAV Value 100 75 75 75 53 300 200 Unit V V V V V mA mA Non repetitive peak f
Vishay Telefunken
Vishay Telefunken
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68 1N914   HIGH SPEED SILICON SWITCHING DIODE

Transys Electronics L I M I T E D HIGH SPEED SILICON SWITCHING DIODE IN914, B IN916 250mW DO- 35 Glass Axial Package FEATURES Intended for General Purpose Application. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VR Reverses Voltage ( Continuous) VRRM Repetitive Peak Reverse Voltage Average Forward Current TA =25ºC IF (AV) IF (AV) TA =150ºC IF Forward Current (D.C.) IFRM Repetitive Peak Forward Current Non Repetitive Peak Surge Current IFSM tp=1sec Ptot Power Dissipation Tstg St
TRANSYS
TRANSYS
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67 1N914   Silicon Switching Diode

Texas
Texas
pdf
66 1N914   Switching Diode

Switching Diode 1N914/1N914A/1N914B Switching Diode Features • • • • Fast switching speed Electrically indentical to standard JEDEC High Conductance Axial lead package ideally suited for automatic insertion DO-35 Mechanical Data • • • • • Case: Molded Glass DO-35 Terminals: Solderable per MIL-STD-202E, Method 208 Polarity: Color band denotes cathode Mounting position: Any Approx. Weight: approx. 0.13 gram Maximum Ratings and Electrical Characteristics TA=25°C unless otherwise specified Symbol VR VR
TAITRON
TAITRON
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65 1N914   SMALL SIGNAL SWITCHING DIODE

CE CHENYI ELECTRONICS FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34 1N914 THRU 1N4454 SMALL SIGNAL SWITCHING DIODE MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end . Weight: Approx. 0.13gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Peak reverse Type VRM(V) Max. Aver. Current Max. Dissip At 25 Max. temperature Max. Forward Voltage drop VF at IF (V) 1.
Shanghai Lunsure Electronic Tech
Shanghai Lunsure Electronic Tech
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64 1N914   SILICON EPITAXIAL PLANAR DIODE

Semtech Corporation
Semtech Corporation
pdf
63 1N914   High-speed diode

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 100 V • Repetitive peak forward current: max. 225 mA. The diode is type branded. handbook, halfpage k 1N914 DESCRIPTION The 1N914 is a
NXP
NXP
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62 1N914   Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35

New Jersey Semiconductor
New Jersey Semiconductor
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Последние обновления

Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
HYDIS
pdf

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