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Datasheet 1N5712 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5712 | SCHOTTKY RECTIFIERS 1N5711, 1N5712 & 1N6263
High-reliability discrete products and engineering services since 1977
SCHOTTKY RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), sta |  Digitron Semiconductors | rectifier |
| 2 | 1N5712 | Small Signal Schottky Diodes Features
Metal-to-silicon junction High breakdown voltage Low turn-on voltage Ultrafast switching speed Prmarly intended for high level UHF/VHF detection and pulse applications with broad dynamic range
Mechanical Data
Case:JEDEC DO--35,glass case Polarity: Color band denotes cathode end Weight: Appr |  LGE | diode |
| 3 | 1N5712 | General Purpose Axial Lead Glass Packaged Schottky Diodes 1N5711, 1N5712, MADS-005711, MADS-005712
General Purpose Axial Lead Glass Packaged Schottky Diodes
Features
Low Reverse Leakage Current Low Forward Voltage Drop Pico second Switching Speed Offered in Tape and Reel Packaging RoHS* Compliant
Glass Package Style
Description and |  MA-COM | diode |
| 4 | 1N5712 | Schottky Barrier Diodes Schottky Barrier Diodes for General Purpose Applications Technical Data
1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900
Features
• Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available
Th | .gif){kind=small} Agilent(Hewlett-Packard) | diode |
| 5 | 1N5712 | Schottky Barrier Diodes 1N5711, 1N5712, 5082-2800 Series
Schottky Barrier Diodes for General Purpose Applications
Data Sheet
Description/Applications
The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a |  Avago | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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