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Datasheet 1N5711W Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5711W | DIODE RoHS
1N5711W
TDFeatures .,L· Low Forward Voltage Drop
· Guard Ring Construction for Transient Protection
· Fast Switching Time
O· Low Reverse Capacitance
· Surface Mount Package Ideally Suited for
IC CAutomatic Insertion
1.6
SOD-123
2.70 3.70
0.55
1.05
ONMaximum Ratings @ TA = 25°C unle |  WEJ | diode |
| 2 | 1N5711W | Surface Mount Schottky Barrier Diode 1N5711W
Surface Mount Schottky Barrier Diode
Voltage Range 70 Volts
250m Watts Power Dissipation
SOD-123
Features
Low forward voltage drop Guard Ring Construction for Transient Protection Fast switching time Low Reverse Capacitance Surface mount package ideally suited for automatic insertion
Mecha |  LGE | diode |
| 3 | 1N5711W | Surface Mount Schottky Barrier Diode 1N5711W
Surface Mount Schottky Barrier Diode
Features
Low forward voltage drop Guard Ring Construction for Transient Protection Fast switching time Low Reverse Capacitance Surface mount package ideally suited for automatic insertion
Mechanical Data
Voltage Range 70 Volts
250m Watts Power Dissipat |  Taiwan Semiconductor | diode |
| 4 | 1N5711W | Schottky Barrier Diode ( SMD ) Features
• Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automated Insertion • Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
1N5711W
|  Diodes Incorporated | diode |
| 5 | 1N5711WS | Schottky Barrier Diode ( SMD ) Features
• Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Speed • Low Capacitance • Surface Mount Package Ideally Suited for Automated Insertion • Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
1N5711WS
SURFAC | Diodes Incorporated | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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