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Datasheet 1N5711 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 34 | 1N5711 | SCHOTTKY RECTIFIERS 1N5711, 1N5712 & 1N6263
High-reliability discrete products and engineering services since 1977
SCHOTTKY RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), sta |
 Digitron Semiconductors |
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| 33 | 1N5711 | Schottky Barrier Diodes Schottky Barrier Diodes for General Purpose Applications
Technical Data
1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900
Features
• Low Turn-On Voltage As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage Up to 70 V
• Matched Characteristics Available
De |
 Agilent |
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| 32 | 1N5711 | SCHOTTKY BARRIER DIODES 1N5711 and 1N6263
VRRM : 70V , 60V
FEATURES :
• For general purpose applications • Metal-on-silicon Schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling |
 EIC |
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| 31 | 1N5711 | SMALL SIGNAL SCHOTTKY DIODES R
SEMICONDUCTOR
FEATURES
For general purpose applications Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast swit |
 JINAN JINGHENG ELECTRONICS |
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