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1N5383B даташитФункция этой детали – «5w Zener Diode». |
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Номер в каталоге | Производители | Описание | |
1N5383B | TRSYS |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE 1N5348B THRU 1N5388B
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts
FEATURES l l l l l l l Low profile package Built-in strain relief Glass passivated junction Low inductance Typical ID less than 1 A above 13V High temperature soldering : DO-201AE
260 /10 seconds at terminals Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
MECHANICAL DATA Case: JEDEC DO-201AE Molded plastic over passivated junction Terminals: Solder plated, solderable per MIL-ST |
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1N5383B | TAITRON |
5.0W Zener Diodes 5.0W Zener Diodes
Features
• Glass passivated junction • Complete voltage range 3.3 to 200V • High peak reverse power dissipation • High reliability • Low leakage current • RoHS Compliant
5.0W Zener Diodes 1N5333B – 1N5388B
1.5KE
Mechanical Data
Case: Epoxy: Lead: Polarity: Weight:
Molded plastic black body,1.5KE Plastic package has UL flammability 94V-0 Plated axial leads, solderable per MIL-STD-750, Method 2026 Color band denotes cathode end 0.045 ounce, 1.2 grams
Maximum Ratings (T Ambient=25ºC un |
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1N5383B | STMicroelectronics |
5W SILICON ZENER DIODES |
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1N5383B | Pan Jit International Inc. |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) Approve Sheet Part Number: 1N5348B~1N5388B
DATA SHEET
1N5348B~1N5388B
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE- 11 to 200 Volts Power - 5.0 Watts
FEATURES
• Built-in strain relief • Glass passivated junction • Low inductance • Typical IR less than 5.0µA above 11V • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • High temperature soldering : 260°C /10 seconds at terminals
.375(9.5) .285(7.2) 1.0(25.4) MIN.
DO-201AE
Unit: inch ( mm )
• Low profile package
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1N5383B | ON Semiconductor |
40 Zener Voltage Regulators 1N53 Series
5 Watt Surmetict 40 Zener Voltage Regulators
This is a complete series of 5 Watt Zener diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon−oxide passivated junctions. All this in an axial lead, transfer−molded plastic package that offers protection in all common environmental conditions.
Features
• Zener Voltage Range − 3.3 V to 200 V • ESD Rating of Class 3 (>16 kV) per Human Body Model • Surge Rating of up to 180 W @ 8.3 ms • Maximu |
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1N5383B | New Jersey Semiconductor |
Diode Zener Single 150V 5% 5W 2-Pin DO-201AE |
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1N5383B | Multicomp |
Zener Diodes Zener Diodes: 1N5333B - 1N5388B
Features: tZener voltage range: 3.3V to 200V tSurge rating of up to 180W @ 8.3mS
Mechanical Data: tCase DO-201AE tMax lead temp for soldering: 260oC, 1/16in from case for 10sec tPolarity: cathode band tMarking: type number tApprox weight: 0.032ounces, 0.9grams
DO - 201AE
Dimensions in mm Dimensions in millimeters
Maximum Ratings & Electrical Characteristics:
Ratings at 25o Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate by 20%.
Symbol:
Z |
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1N5383B | Motorola Inc |
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
5 Watt Surmetic 40 Silicon Zener Diodes
This is a complete series of 5 Watt Zener Diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions. All this is in an axial-lead, transfer-molded plastic package that offers protection in all common environmental conditions. Specification Features: • Up to 180 Watt Surge Rating @ 8.3 ms • Maximum Limits Guaranteed on Seven Electrical Parameters Mechanical C |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |