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даташит 12NK90Z IC Даташиты PDF |
| Номер в каталоге | Описание | Производители | ||
| 1 | 12NK90Z | STW12NK90Z
STW12NK90Z
N-channel 900V - 0.72Ω - 11A - TO-247 Zener-protected SuperMESH™ Power MOSFET
General features
Type STW12NK90Z
VDSS 900V
RDS(on) <0.88Ω
ID pW 11A 230W
■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing |
 STMicroelectronics |
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12N даташита ( переписка ) |
| Номер в каталоге | Описание | Производители | |
| 12NS | Standard Recovery Diodes Datasheet.es
Naina Semiconductor emiconductor Ltd.
Standard Recovery Diodes (Stud Version)
Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type
12 12NS(R)
Electrical Specifications (TE = 250C, unle |
 Naina Semiconductor |
 |
| 12N30 | 12A 300V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 12N30
Preliminary Power MOSFET
12A, 300V N-CHANNEL POWER MOSFET
DESCRIPTION
The U TC 12N30 is an N-ch annel mod e p ower MOSF ET using UTC’ s advanced technology to provide customers with planar stripe and DMOS te chnology. T his techno logy |
 UNISONIC TECHNOLOGIES |
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| 12N25 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 12N25
12A, 250V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 12N25 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum o |
 Unisonic Technologies |
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| 12N65H | N-CHANNEL MOSFET 12N65(F,B,H)
12A mps,650 Volts N-CHANNEL MOSFET
FEATURE
12A,650V,RDS(ON)=0.7Ω@VGS=10V/6A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 12N65
ITO-220AB 12N65F
TO-263 12N65B
TO-262 12N65H
Absolute M |
 CHONGQING PINGYANG |
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| 12NSR | Standard Recovery Diodes Datasheet.es
Naina Semiconductor emiconductor Ltd.
Standard Recovery Diodes (Stud Version)
Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type
12 12NS(R)
Electrical Specifications (TE = 250C, unle |
Naina Semiconductor |
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| 12NSF | Fast Recovery Diodes Naina Semiconductor emiconductor Ltd.
Fast Recovery Diodes (Stud Version)
Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Optional Avalanche Characteristic
12NSF(R)
Electrical Specifications (TE = 250C, unless otherwise noted)
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Naina Semiconductor |
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| 12NN10 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 12NN10
Preliminary Power MOSFET
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
SOP-8
The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-re |
Unisonic Technologies |
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| 12NSFR | Fast Recovery Diodes Naina Semiconductor emiconductor Ltd.
Fast Recovery Diodes (Stud Version)
Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Optional Avalanche Characteristic
12NSF(R)
Electrical Specifications (TE = 250C, unless otherwise noted)
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Naina Semiconductor |
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| 12N45 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
12N45
·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.5Ω (Max) ·Fast Switching
·APPLICATIONS ·Switch mo |
 Inchange Semiconductor |
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| 12N65B | N-CHANNEL MOSFET 12N65(F,B,H)
12A mps,650 Volts N-CHANNEL MOSFET
FEATURE
12A,650V,RDS(ON)=0.7Ω@VGS=10V/6A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 12N65
ITO-220AB 12N65F
TO-263 12N65B
TO-262 12N65H
Absolute M |
CHONGQING PINGYANG |
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На первой странице data sheets приводятся: |
| DataSheet26.com | 2020 | Контакты |