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12N65H даташитФункция этой детали – «N-channel Mosfet». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
12N65H | CHONGQING PINGYANG |
N-CHANNEL MOSFET 12N65(F,B,H)
12A mps,650 Volts N-CHANNEL MOSFET
FEATURE
12A,650V,RDS(ON)=0.7Ω@VGS=10V/6A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 12N65
ITO-220AB 12N65F
TO-263 12N65B
TO-262 12N65H
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanch |
Это результат поиска, начинающийся с "12N65H", "12N" |
Номер в каталоге | Производители | Описание | |
12N035 | BL |
N-Channel Field Effect Transistor Bay Linear
Inspire the Linear Power
N-Channel Field Effect Transistor
12N035
Description
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as au |
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12N06Z | UNISONIC TECHNOLOGIES |
12A 60V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 12N06Z
12A, 60V N-CHAN NEL POWER MOSFET
DESCRIPTION
1
Power MOSFET
The U TC 12N 06Z is an N-c hannel enh ancement mode Po wer MOSFET using UT C’ s adva nced te chnology to prov ide customers with a mi nimum on-state res istance, h igh s witch |
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12N10 | Unisonic Technologies |
N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 12N10
12A, 100V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged avalanche ch |
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12N10P | CHONGQING PINGYANG |
N-CHANNEL MOSFET 12N10P
12 Amps,100 Volts N-CHANNEL Power MOSFET
FEATURE
12A,100V,RDS(ON)MAX=36mΩVGS=10V/10A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
APPLICATION
High Frequency Piont-of-Load Synchronous Buck Converter fo |
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12N18 | Inchange Semiconductor |
N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
12N18
·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 180V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.25Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mo |
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12N20 | Inchange Semiconductor |
N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
12N20
·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.25Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mo |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |