| No | Part number | Description ( Function ) | Manufacturers | |
| 3 | 11N90 | N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 11N90 ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Dra |
 Inchange Semiconductor |
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| 2 | 11N90 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 11N90 Preliminary Power MOSFET 11 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220 The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching perf |
 Unisonic Technologies |
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| 1 | 11N90C | FQA11N90C FQA11N90C 900V N-Channel MOSFET September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 23pF) Fast switching 100% avalanche tested Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistor |
 Fairchild Semiconductor |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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