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08N50E даташит

Функция этой детали – «Fmp08n50e».



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Номер в каталоге Производители Описание PDF
08N50E Fuji Electric
Fuji Electric
  FMP08N50E

FMP08N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maxi
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Это результат поиска, начинающийся с "08N50E", "08N"

Номер в каталоге Производители Описание PDF
FMP08N50E Fuji Electric
Fuji Electric

N-CHANNEL SILICON POWER MOSFET

FMP08N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche
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FMV08N50E Fuji Electric
Fuji Electric

N-CHANNEL SILICON POWER MOSFET

Datasheet.es FMV08N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0
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P08N50E Fuji Electric
Fuji Electric

FMP08N50E

FMP08N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche
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08N60 SamHop Microelectronics
SamHop Microelectronics

N-Channel Enhancement Mode Field Effect Transistor

Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP08N60 SDF08N60 Ver 2.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 600V 8A 0.89 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package.
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08N80C3 Infineon Technologies
Infineon Technologies

SPP08N80C3

CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low e
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ADC08500 National Semiconductor
National Semiconductor

500 MSPS A/D Converter

ADC08500 High Performance, Low Power 8-Bit, 500 MSPS A/D Converter June 2007 ADC08500 High Performance, Low Power 8-Bit, 500 MSPS A/D Converter General Description The ADC08500 is a low power, high performance CMOS analog-to-digital converter that digitizes signals to 8 bits re
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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