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08N50E даташитФункция этой детали – «Fmp08n50e». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
08N50E | Fuji Electric |
FMP08N50E FMP08N50E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Equivalent circuit schematic
Drain(D)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Gate(G) Source(S)
Maxi |
Это результат поиска, начинающийся с "08N50E", "08N" |
Номер в каталоге | Производители | Описание | |
FMP08N50E | Fuji Electric |
N-CHANNEL SILICON POWER MOSFET FMP08N50E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche |
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FMV08N50E | Fuji Electric |
N-CHANNEL SILICON POWER MOSFET Datasheet.es
FMV08N50E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0 |
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P08N50E | Fuji Electric |
FMP08N50E FMP08N50E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche |
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08N60 | SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP08N60
SDF08N60
Ver 2.1
PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ
600V 8A 0.89 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package.
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08N80C3 | Infineon Technologies |
SPP08N80C3 CoolMOSTM Power Transistor
Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low e |
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ADC08500 | National Semiconductor |
500 MSPS A/D Converter ADC08500 High Performance, Low Power 8-Bit, 500 MSPS A/D Converter
June 2007
ADC08500 High Performance, Low Power 8-Bit, 500 MSPS A/D Converter
General Description
The ADC08500 is a low power, high performance CMOS analog-to-digital converter that digitizes signals to 8 bits re |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |