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даташит 06N03LA IC Даташиты PDF |
Номер в каталоге | Описание | Производители | ||
1 | 06N03LA | IPB06N03LA
IPB06N03LA IPI06N03LA, IPP06N03LA
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated P-TO263-3-2
Product Summary V DS R DS(on),max (SMD version) ID 25 5.9 50 V mΩ A
P-TO262-3-1
P-TO220-3-1
Type IPB06N03LA IPI06N03LA IPP06N03LA
Package P-TO263-3-2 P-TO262-3-1 P-TO2 |
![]() Infineon Technologies Corporation |
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06N даташита ( переписка ) |
Номер в каталоге | Описание | Производители | |
06N02C | N-Channel Enhancement Mode Power MOSFET FNK06N02C N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The FNK06N02Cuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
ID = 50A RDS(ON)< 7.5mΩ @ VGS=4.5V
DS(ON)<10.0mΩ @ VGS=2.5V
● High Powe |
![]() FNK |
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06N03 | 25V N-Channel Enhancement Mode MOSFET PJD06N03
25V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
• RDS(ON), VGS@10V,IDS@30A=6mΩ • RDS(ON), VGS@4.5V,IDS@30A=9mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and M |
![]() Pan Jit International |
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06N80C3 | SPP06N80C3 SPP06N80C3
CoolMOSTM Power Transistor
Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge |
![]() Infineon |
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Номер в каталоге | Описание | Производители | |
CD4515BC | The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. |
![]() Fairchild Semiconductor |
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HV101WU1-1E6 | HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. |
![]() HYDIS |
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На первой странице data sheets приводятся: |
DataSheet26.com | 2020 | Контакты |