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011N40P1 даташит электронных компонентов


011N40P1 Datasheet ( Даташиты )

Номер Номер в каталоге Описание Производители PDF
1 011N40P1  011N40P1 Даташит - KEC KHB011N40P1

www.DataSheet.co.kr SEMICONDUCTOR TECHNICAL DATA General Description KHB011N40P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB011N40P1 A O C F E G B Q I DIM MILLIMETERS _ 0.2 9.9 + A B C D E This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 400V, ID= 10.5A Drain-Source ON Resistance
KEC
KEC
PDF


011N40P даташита ( переписка )

Номер в каталоге Описание Производители PDF
011N40P1  011N40P1 Даташит - KEC KHB011N40P1

www.DataSheet.co.kr SEMICONDUCTOR TECHNICAL DATA General Description KHB011N40P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB011N40P1 A O C F E G B Q I DIM MILLIMETERS _ 0.2 9.9 + A B C D E This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 400V, ID= 10.5A Drain-Source ON Resistance
KEC
KEC
PDF



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