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C945 PDF даташит

Спецификация C945 изготовлена ​​​​«WILLAS» и имеет функцию, называемую «Plastic-Encapsulate Transistors».

Детали детали

Номер произв C945
Описание Plastic-Encapsulate Transistors
Производители WILLAS
логотип WILLAS логотип 

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C945 Даташит, Описание, Даташиты
WILLAS
SO1T.0-A2S3URPFAlaCEsMtiOcU-NETnScCHaOpTsTKuYlBaAtReRTIErRaRnECsTiIsFItEoRSrs-20V- 200V
SOD-123+ PACKAGE
FM120-M+
C945 THRU
FM1200-M
Pb Free Produc
Features
Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
TRANSISToOptRim(izNePbNoa)rd space.
FEATURE•• HLoigwhpcouwrreernltocsasp, ahibgihlitey,ffliocwiefnocryw. ard voltage drop.
z ExceHlilgehnstuhrgFeE cLainpaebairliittyy.
z LowGnuoairsdering for overvoltage protection.
Ultra high-speed switching.
z Pb-FSrileiceonpeapcitakxaiagl eplainsaar cvhaipil,ambelteal silicon junction.
SOD-123H
SOT-230.146(3.7)
0.130(3.3)
1. BASE
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
RoHLSeapd-rforedeupcatrtfsomr epeat ceknvinirgoncmoednetalssutaffnidxarGdsof
MIL-STD-19500 /228
HaloRgoHeSnpfrroedeuctpfroor pdaucckitngfocrodpeascufkfiixn"gG"code suffix “H”
2. EMITTER
3. COLLECTOR
Halogen free product for packing code suffix "H"
MARKINMGe:CcRhanical data
Epoxy : UL94-V0 rated flame retardant
MAXIMUMCaRseA:TMINoldGeSd p(lTaas=tic2,5SODu-1n2le3Hss otherwise noted)
Symbol
Terminals
:PlaPteadratemrmetinear ls,
solderable
per
,
MIL-STD-750
Value
Method 2026
VCBO PCoolallreitcyto: rI-nBdaicsaeteVdobltay gceathode band
60
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Unit
V
Dimensions in inches and (millimeters)
VCEO MCooullnetcintogrP-Eomsiittitoenr :VAonltyage
50 V
VEBO WEemigithtet r:-ABpapsreoxViomltaatgeed 0.011 gram
5V
IC CollecMtoAr XCIuMrrUenMt -RCoAnTtiInNuGouSs AND ELECTRICAL CHAR15A0CTERISTICS mA
PCRatings atC2o5llectaomr bPieonwt etermDpiesrsaiptuaretiounnless otherwise specified.
200
mW
TJSingle phaJsuenhcatilof nwaTveem, 6p0eHrazt,ureresistive of inductive load.
150
  For
Tstg
capacitive load, derate current
Storage Temperature
by
20%
-55-150
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
ELECMMaaTrxkRiminIugCmCAoRdLeecuCrrHenAt PReAakCRTevEerRseISVoTltIaCgeS (Ta=25VRuRnM less12o20therw1330ise sp41e04cified51)05
16
60
18 10
115 120
80 100 150 200
Maximum RPMarSaVmoletatgeer
SymVbRoMl S
T1e4st con2d1itions28
35 Min42 Typ 56 Max70 Unit105
140
Maximum DC Blocking Voltage
Collector-base breakdown voltage
Maximum Average Forward Rectified Current
V(BR)CBVODC
IO
20 30
IC=100uA, IE=0
40
50 60
60
1.0
80
100 150
V
200
C  ollector-emitter breakdown voltage
V(BR)CE  O
IC=1mA , IB=0
50  
V 
Peak Forward
Emsuitpteerrim-bpoasseed
Surge Current 8.3 ms single half
obnrreaatekddlooawd (nJEvDoElCtamgeethod)
sine-wVav(eBR)EBIFOSM
IE=0.1mA, IC=0
5 30
V
CoTllyepcictaol rThceurmt-aolfRf ecsuisrtraenncet (Note 2)
CoTllyepcictaol rJucnuctti-oonfCf acpuarcriteanncte (Note 1)
Operating Temperature Range
EmSittotreargecuTet-mopfefrcatuurrereRnatnge
ICBORΘJA
ICERCJ
TJ
IEBTOSTG
VCB=60V, IE=  0
 
VCE=55V-5,R5=to10+1M25
VEB=5V , IC=0
40
120
 
- 65 to +175
 0.1 uA
 0.1 uA
-55 to +150
0.1 uA
 
DC current gain CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
hFE(1)
VCE=6 V , IC=1mA
130
400
hFES(Y2V)MFBOL
FVMC1E2=0-6MHVF,M13I0C-=M00H..51F0Mm1A40-MH
FM150-MH4F0M160-MH
0.70
FM180-MH FM1100-MH
0.85
FM1150-MH
0.9
FM1200-MH
0.92
CoMllaexcimtourm-eAmveirtateger sRaevtuerrsaetiCounrrevnot lattag@eT A=25℃VCE(sat)IR
BaRsaete-edmDCittBelrocskaintguVraotltiaogne voltage @T A=125℃VBE(sat)
IC=100mA, IB=10mA
IC=100mA, IB=10mA
0.5 0.3 V
10 1 V
 
 
TrNanOTsEitSio: n frequency
fT VCE=6V,IC=10mA,f =30 MHz 150
MHz
Co1l-lMeceatosurreoduattp1uMtHcZaapnadcaiptpalniecd ereverse voltage of 4.0 VCDoCb.
2- Thermal Resistance From Junction to Ambient
N   oise figure
NF
VCB=10V,IE=0,f=1MHZ
VCE=6V,IC=0.1mA
Rg=10k,f=1kMHZ
3.0 pF
4 10 dB
CLASSIFICATION OF hFE(1)
Rank
L
H
Range
2012-06
130-200
200-400
WILLAS ELECTRONIC COR
2012-0
WILLAS ELECTRONIC CORP.









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C945 Даташит, Описание, Даташиты
WILLAS
SO1T.0-A2S3URPFlAaCsE tMiOcU-NETnScCHaOpTsTKuYlaBAteRRTIErRaRnEsCTisIFItEoRrSs-20V- 200V
SOD-123+ PACKAGE
FM120-M+
C945 THRU
FM1200-M
Pb Free Produ
Features
Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
SOD-123H
Low profile surface mounted application in order to
Typical Characteristicsoptimize board space.
Low power loss, high efficiency.
0.146(3.7)
High current capability, low forward voltage drop.
0.130(3.3)
0.012(0.3) Typ.
12
High surge ca
Guardring for
poSavtebatriilvcitoyCl.thaagreacpteroritseticctio
n.
1000 hFE —— IC
Ultra high-speed switching.
COMMON
10
Silicon
30uA
epitaxial
27uA
planar
chip,
metal
siliconETM=juI2T5nTEcRtion.
a
Lead-free parts meet environmental standards of
MIL-STD-1950204u/A228
8RoHS product for p2a1cukAing code suffix "G"
300
T =100
a
T =25
a
0.071(1.8)
0.056(1.4)
Halogen free product for1p8auAcking code suffix "H"
6Mechanical data 15uA
100
Epoxy : UL94-V0 rated flame r1e2utAardant
4
Case : Molded plastic, SOD-123H9uA
2
Terminals
:Plated
terminals,
solderabl6euAper
,
MIL-STD-750
30
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
0Polarity : Indicated by cathode band
I =3uA
B
10
V =6V
CE
Dimensions in inches and (millimeters)
0 2 4 6 8 10 12
0.7 1
3
10 30
100 150
Mounting CPOoLsLEitCioTOnR:-AEMnIyTTER VOLTAGE V (V)
CE
COLLECTOR CURRENT I (mA)
C
Weight : Approximated 0.011 gram
VCEsat —— IC
VBEsat —— IC
300 1000
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
  For c1a00pacitive load, derate current by 20%
800
T =25
a
RATINGT S=100
a
Marking Code
T =25
Maximum Recurrent Peak Reverse Voltage a
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
12 13 600 14 15 16
VRRM
20
30
40
50
60
18 10
80 Ta=100100
115 120
150 200
Maxim3u0m RMS Voltage
VRMS
14
21
28
35
42
56
70
105 140
Maximum DC Blocking Voltage
VDC 20 30 400 40 50 60
80 100 150 200
Maximum Average Forward Rectified Current
 
Peak F1o0rward Surge Current 8.3 ms single half sine-wave
superimp1osed on rated3load (JEDEC m10ethod)
30
COLLECTOR CURRENT I (mA)
Typical Thermal Resistance (Note 2)
C
TOyppeircaat1li5nJgunTcetimonpeCraatpuarecitRaanCncoegb e/(NCoitbe 1) — VCB / VEB
Storage Temperature Range
 
IO
  β=10
IFSM100 150
RΘJA
CJ
fT=1JMHz
TSIE=T0G/IC=0
T =25
a
200
0.1
 
 
-55 to0+.25125
0.20
1.0
  β=10
0.3
1
30
3
10
30
100 150
COLLECTOR CURRENT I
C
40
P C 120 Ta
(m  A)
 
-55 to +150
- 65 to +175
 
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximu10m Forward Voltage at 1.0A DC
C
ib
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
VF
IR
0.50
0.15
0.70
0.5
10
0.85
0.9 0.92
 
 
NOTES:5
1- Measured at 1 MHZ and applied reverse voClotbage of 4.0 VDC.
0.10
2- Thermal Resistance From Junction to Ambient
 
 
0
0.1 0.3
1
REVERSE BIAS VOLTAGE
3
V (V)
10
0.05
0.00
0
25 50 75 100
AMBIENT TEMPERATURE T ()
a
125
150
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.









No Preview Available !

C945 Даташит, Описание, Даташиты
WILLAS
SOT1.-02A3SUPRFlaACsEtiMcO-UENnT ScCaHpOsTTuKlYaBtAeRRTIrEaR nREsCiTsIFtIoERrSs-20V- 200V
SOD-123+ PACKAGE
FM120-M
C945 THRU
FM1200-M
Pb Free Produ
Features
O u t l i n e D r a w i n gBatch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
.122(3.10)RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data .106(2.70)
Epoxy : UL94-V0 rated flame retardant
Package outline
S O T- 2 3SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
Case : Molded plastic, SOD-123H
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
Method 2026
Polarity : Indicated by cathode band
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Mounting Position : Any
Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
  For capacitive load, derate current by 20%
.080(2.04)Marking Code
RATINGS
.070(1.78)Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
.008(0.20)SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
.003(0.08)12 13 14 15 16
VRRM
20
30
40
50
60
18 10
115 120
80 100 150 200
VRMS
14
21
28
35
42
56 70
105 140
Maximum DC Blocking Voltage
VDC 20 30 40 50 60
80 100 150 200
Maximum Average Forward Rectified Current
 
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
.004(0.10)MAX.Operating Temperature Range
Storage Temperature Range
 
IO
 
IFSM
RΘJA
CJ
TJ
TSTG
 
 
-55 to +125
1.0
 
30
40
120
 
- 65 to +175
 
 
-55 to +150
 
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Maximum Forward Voltage at 1.0A DC
VF
0.50 0.70
0.85 0.9 0.92
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
 
@T.0A=21205℃(0.50)
0.5  
10
NOTES:
.012(0.30)1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
Dimensions in inches and (millimeters)
2012-06
2012-0
Rev.D
WILLAS ELECTRONIC CO
WILLAS ELECTRONIC CORP.










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