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HAF2021S PDF даташит

Спецификация HAF2021S изготовлена ​​​​«Renesas» и имеет функцию, называемую «Silicon N-Channel MOSFET».

Детали детали

Номер произв HAF2021S
Описание Silicon N-Channel MOSFET
Производители Renesas
логотип Renesas логотип 

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HAF2021S Даташит, Описание, Даташиты
HAF2021(L), HAF2021(S)
Silicon N Channel MOS FET Series
Power Switching
REJ03G0179-0200Z
(Previous ADE-208-1459A(Z))
Rev.2.00
Mar.05.2004
Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in
over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc.
Features
Logic level operation (6 V Gate drive)
High endurance capability against to the short circuit
Built–in the over temperature shut–down circuit
Latch type shut–down operation (Need 0 voltage recovery)
Outline
LDPAK
D
G Gate resistor
Temperature
Sensing Circuit
www.DataSheet4U.com
Latch
Circuit
Gate
Shut-down
Circuit
S
44
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00, Mar.05.2004, page 1 of 8









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HAF2021S Даташит, Описание, Даташиты
HAF2021(L), HAF2021(S)
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10µs, duty cycle 1 %
2. Value at Ta = 25°C
Symbol
VDSS
VGSS
VGSS
ID
ID(pulse)Note1
IDR
Pch Note2
Tch
Tstg
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH(sd)1
IIH(sd)2
Tsd
VOP
Min
3.5
3.5
Typ
0.6
0.35
175
Ratings
60
16
–2.5
50
100
50
100
150
–55 to +150
Max Unit
—V
1.2 V
100 µA
50 µA
1 µA
— mA
— mA
°C
12 V
(Ta = 25°C)
Unit
V
V
V
A
A
A
W
°C
°C
Test Conditions
Vi = 6 V, VDS = 0
Vi = 3.5 V, VDS = 0
Vi = 1.2 V, VDS = 0
Vi = 6 V, VDS = 0
Vi = 3.5 V, VDS = 0
Channel temperature
www.DataSheet4U.com
Rev.2.00, Mar.05.2004, page 2 of 8









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HAF2021S Даташит, Описание, Даташиты
HAF2021(L), HAF2021(S)
Electrical Characteristics
Item
Symbol Min Typ Max Unit
Drain current
Drain current
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
ID1
ID2
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS(op)1
IGS(op)2
IDSS
VGS(off)
|yfs|
RDS(on)
90
60
16
–2.5
2.2
15
0.6
0.35
50
8
10
100
50
1
–100
10
3.4
12
A
mA
V
V
V
µA
µA
µA
µA
mA
mA
µA
V
S
m
Static drain to source on state
resistance
RDS(on)
9.5 15
m
Output capacitance
Coss —
1450 —
pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
td(on)
tr
td(off)
tf
VDF
trr
20 —
75 —
3—
2.6 —
0.9 —
110 —
µs
µs
µs
µs
V
ns
Over load shut down
operation time Note4
tos — 0.8 — ms
www.DataSNhoetets4:U.3c.omPulse test
4. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
VGS = 6 V, VDS = 10 V
VGS = 1.2 V, VDS = 10 V
ID = 10 mA, VGS = 0
IG = 300 µA, VDS = 0
IG = –100 µA, VDS = 0
VGS = 6 V, VDS = 0
VGS = 3.5 V, VDS = 0
VGS = 1.2 V, VDS = 0
VGS = –2.4 V, VDS = 0
VGS = 6 V, VDS = 0
VGS = 3.5 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 25 A, VDS = 10 V Note3
ID = 25 A, VGS = 10 V Note3
ID = 25 A, VGS = 6 V Note3
VDS = 10 V , VGS = 0, f = 1 MHz
ID = 25 A, VGS = 10 V
RL = 1.2
IF = 50 A, VGS = 0
IF = 50 A, VGS = 0
diF/ dt =50 A/µs
VGS = 6 V, VDD = 16 V
Rev.2.00, Mar.05.2004, page 3 of 8










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