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PDF HAF2017S Data sheet ( Hoja de datos )
| Número de pieza | HAF2017S | |
| Descripción | Silicon N-Channel Power MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HAF2017S (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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HAF2017(L), HAF2017(S)
Silicon N Channel Power MOS FET
Power Switching
REJ03G0234-0200Z
(Previous ADE-208-1637 (Z))
Rev.2.00
Apr.13.2004
Descriptions
This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in
over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built-in the over temperature shutdown circuit
• Latch type shutdown operation (Need 0 voltage recovery)
Outline
D
G Gate Resistor
Tempe-
rature
Sensing
Circuit
Latch
Circuit
Gate
Shut-
down
Circuit
S
LDPAK(L)
4
LDPAK(S)-1
4
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00, Apr.13.2004, page 1 of 8
1 page  
HAF2017(L), HAF2017(S)
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
ID = 20 A
60
10 A
5A
VGS = 4.5 V
40
5A
20
VGS = 10 V
ID = 20 A
10 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
500
200
100
50
Body-Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
20
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
50
Pulse Test
40
30
20 10 V
10 5 V
VGS = 0 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VDS (V)
Forward Transfer Admittance vs.
Drain Current
100
VDS = 10 V
Pulse Teat Tc = -25°C
10
25°C
1 75°C
0.1
0.01
0.01
0.1 1
10
Drain Current ID (A)
100
Switching Characteristics
100
VGS = 5 V, V DD = 30 V
50 PW = 300 µs, duty < 1 %
tr
20
10 t d(on)
5
2 tf
t d(off)
1
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
1000
Coss
100
VGS = 0
f = 1 MHz
10
0 10 20 30 40 50 60
Drain to Source Voltage VDS (V)
Rev.2.00, Apr.13.2004, page 5 of 8
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HAF2017S.PDF ] | |
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