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H5N5005PL PDF даташит

Спецификация H5N5005PL изготовлена ​​​​«Renesas» и имеет функцию, называемую «Silicon N-Channel MOS FET».

Детали детали

Номер произв H5N5005PL
Описание Silicon N-Channel MOS FET
Производители Renesas
логотип Renesas логотип 

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H5N5005PL Даташит, Описание, Даташиты
H5N5005PL
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance: RDS(on) = 0.070 typ.
Low leakage current: IDSS = 10 µA max (at VDS = 500 V)
High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 )
Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A)
Avalanche ratings
Built-in fast recovery diode: trr = 220 ns typ
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
D
REJ03G0419-0400
Rev.4.00
May 13, 2009
1
2
3
G
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
IAP Note3
Pch Note2
θch-c
Tch
Tstg
1. Gate
2. Drain (Flange)
3. Source
S
Ratings
500
±30
60
240
60
240
30
270
0.463
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
REJ03G0419-0400 Rev.4.00 May 13, 2009
Page 1 of 6









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H5N5005PL Даташит, Описание, Даташиты
H5N5005PL
Electrical Characteristics
Item
Drain to Source breakdown voltage
Zero Gate voltage Drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery
time
Body-Drain diode reverse recovery
charge
Note: 4. Pulse test
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Qrr
Min
500
2.0
25
Typ
42
0.070
Max
10
±0.1
4.0
0.085
10550
1060
180
115
380
560
300
300
40
155
1.0
220
1.5
2.0 —
Unit
V
µA
µA
V
S
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VDS = 500 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 30 A, VDS = 10 V Note4
ID = 30 A, VGS= 10 V Note4
pF VDS = 25 V
pF VGS = 0
pF f = 1 MHz
ns ID= 30 A
ns VGS = 10 V
ns RL = 8.33
ns Rg = 10
nC VDD = 400 V
nC VGS = 10 V
nC ID = 60 A
V IF = 60 A, VGS = 0 Note4
ns IF = 60 A, VGS = 0
diF/dt = 100A/µs
µC
REJ03G0419-0400 Rev.4.00 May 13, 2009
Page 2 of 6









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H5N5005PL Даташит, Описание, Даташиты
H5N5005PL
Main Characteristics
Power vs. Temperature Derating
400
300
200
100
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
100
Pulse Test
80
8 V, 10 V
6V
60
40
20
5V
VGS = 4.5 V
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
10
Pulse Test
8
6
ID = 60 A
4
30 A
2
10 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
REJ03G0419-0400 Rev.4.00 May 13, 2009
Page 3 of 6
Maximum Safe Operation Area
1000
300
100
30
10 µs
1 ms 100 µs
10
Operation in
3 this area is
limited by RDS(on)
1
PW = 10 ms
0.3 (1shot)
0.1 DC Operation
0.03 Ta = 25°C (Tc = 25°C)
0.01
1 3 10 30 100
300
1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
200
VDS = 10 V
Pulse Test
160
120
80
40 Tc = 75°C
25°C
–25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
0.1
0.05
0.02
Pulse Test
VGS = 10 V, 15 V
0.01
12
5 10
20
50 100
Drain Current ID (A)










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