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S-LP2305DSLT1G PDF даташит

Спецификация S-LP2305DSLT1G изготовлена ​​​​«LRC» и имеет функцию, называемую «P-Channel Enhancement-Mode MOSFET».

Детали детали

Номер произв S-LP2305DSLT1G
Описание P-Channel Enhancement-Mode MOSFET
Производители LRC
логотип LRC логотип 

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S-LP2305DSLT1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
8V P-Channel Enhancement-Mode MOSFET
VDS= -8V
RDS(ON), [email protected], Ids@"3.5A = 68 mΩ
RDS(ON), [email protected], Ids@"3A = 81 mΩ
RDS(ON), [email protected], Ids@"2A = 118 mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
we declare that the material of product
compliance with RoHS requirements .
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
LP2305DSLT1G
S-LP2305DSLT1G
3
1
2
SOT– 23 (TO–236AB)
3D
G
1
S
2
Ordering Information
Device
LP2305DSLT1G
S-LP2305DSLT1G
LP2305DSLT3G
S-LP2305DSLT3G
Marking
P5S
P5S
Shipping
3000/Tape&Reel
10000/Tape&Reel
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS - 8
Gate-Source Voltage
VGS ± 8
Continuous Drain Current
Pulsed Drain Current 1)
ID -3.5
IDM -12
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Total Device Dissipation FR–5 Board TA = 25°C
PD 1100
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
Unit
V
A
oC
mW
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Value
110
Unit
/W
Rev .O 1/5









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S-LP2305DSLT1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
LP2305DSLT1G , S-LP2305DSLT1G
ELECTRICAL CHARACTERISTICS
Parameter
Static 1)
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
On-State Drain Current 2)
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
Dynamic 3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching 3)
Turn-On Time
Turn-Off Time
Symbol
Test Condition
Min
BVDSS VGS = 0V, ID = -250uA
RDS(on) VGS = -4.5V, ID = -3.5A
RDS(on) VGS = -2.5V, ID = -3A
RDS(on) VGS = -1.8V, ID = -2A
VGS(th) VDS =VGS, ID = -250uA
IDSS VDS = -6.4V, VGS = 0V
IGSS VGS = ± 8V, VDS = 0V
gfs VDS = -5V, ID = -3.5A
ID(on)
VDS v –5 V, VGS = –4.5 V
VDS v –5 V, VGS = –2.5 V
-8
-0.45
–6
–3
IS
VSD IS = -1.6A, VGS = 0V
Ciss
Coss
Crss
VVDS = –4 V, VGS = 0, f = 1MMHHZ
td(on)
tr
td(off)
tf
VDD = –4 V, RL = 4 W
ID = –1.0 A, VGEN = –4.5 V
RG = 6 W
Note: 1. Static parameters are based on package level with recommended wire-bonding
2.For DESIGN AID ONLY, not subject to production testing.
3.Pulse test: PW v300 ms duty cycle v2%.
Typ
47.0
55.0
67.0
8.5
–1.6
1245
375
210
13
25
55
19
Max
68.0
81.0
118.0
-0.8
1
±100
-1.2
20
40
80
35
Unit
V
mΩ
V
uA
nA
S
A
A
V
pF
ns
Rev .O 2/5









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S-LP2305DSLT1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
LP2305DSLT1G , S-LP2305DSLT1G
TYPICAL ELECTRICAL CHARACTERISTICS
Vgs GATE-TO-SOURCE VOLTAGE(V)
Figure 1. Transfer Characteristics
Vds DRAIN-TO-SOURCE VOLTAGE(V)
Figure 2. On–Region Characteristics
Id DRAIN CURRENT(A)
Figure 3. On–Resistance versus Drain Current
Vgs GATE-TO-SOURCE VOLTAGE(V)
Figure 4. On-Resistance vs. Gate-to-Source Voltage
Rev .O 3/5










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