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LNTR4003NLT1G PDF даташит

Спецификация LNTR4003NLT1G изготовлена ​​​​«LRC» и имеет функцию, называемую «Small Signal MOSFET».

Детали детали

Номер произв LNTR4003NLT1G
Описание Small Signal MOSFET
Производители LRC
логотип LRC логотип 

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LNTR4003NLT1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
30 V, 0.56 A, Single, N−Channel, Gate
ESD Protection, SOT-23
Features
Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design
Low Gate Charge for Fast Switching
ESD Protected Gate
Minimum Breakdown Voltage Rating of 30 V
We declare that the material of product is ROHS compliant
and halogen free.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Applications
Level Shifters
Level Switches
Low Side Load Switches
Portable Applications
LNTR4003NLT1G
S-LNTR4003NLT1G
3
1
2
SOT-23
Drain
3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady TA = 25°C
State
TA = 85°C
Steady State
VDSS
VGS
ID
PD
30
±20
0.5
0.37
0.69
Unit
V
V
A
W
Gate 1
2
Source
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
t < 10 s TA = 25°C
TA = 85°C
t<5s
ID
PD
0.56 A
0.40
0.83 W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
IDM 1.7 A
TJ, −55 to °C
Tstg 150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS 1.0 A
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
180 °C/W
Junction−to−Ambient − t < 10 s (Note 1)
RqJA
150
Junction−to−Ambient − Steady State (Note 2)
RqJA
300
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
MARKING DIAGRAM
3
Drain
TR8
1
Gate
2
Source
TR8 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
LNTR4003NLT1G SOT−23
S-LNTR4003NLT1G
Shipping
3000/Tape & Reel
LNTR4003NLT3G SOT−23 10,000/Tape & Reel
S-LNTR4003NLT3G
Rev .O 1/5









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LNTR4003NLT1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
LNTR4003NLT1G , S-LNTR4003NLT1G
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 100 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
40
V
mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V,
VDS = 30 V
TJ = 25°C
VDS = 0 V, VGS = ±10 V
1.0 mA
±1.0 mA
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
VGS(TH)
VGS = VDS, ID = 250 mA
0.8
1.6 V
VGS(TH)/TJ
3.4 mV/°C
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 4.0 V, ID = 10 mA
VGS = 2.5 V, ID = 10 mA
VDS = 3.0 V, ID = 10 mA
1.0 1.5
W
1.5 2.0
0.33 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 4)
Ciss
Coss
Crss
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1.0 MHz,
VDS = 5.0 V
VGS = 5.0 V, VDS = 24 V,
ID = 0.1 A
21
19.7 pF
8.1
1.15
0.15
nC
0.32
0.23
Turn−On Delay Time
td(on)
16.7
Rise Time
Turn−Off Delay Time
tr
td(off)
VGS = 4.5 V, VDD = 5.0 V,
ID = 0.1 A, RG = 50 W
47.9
65.1
ns
Fall Time
tf
64.2
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 10 mA
TJ = 125°C
Reverse Recovery Time
tRR VGS = 0 V, dIS/dt = 8A/ms,
IS = 10 mA
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
0.65 0.7 V
0.45
14 ns
Rev .O 2/5









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LNTR4003NLT1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
LNTR4003NLT1G , S-LNTR4003NLT1G
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1.6
VGS = 10 V to 5 V
1.2
4.5 V
1.6
VDS 10 V
1.2
TJ = −55°C
0.8
0.4
0
0
10
8
4V
3.5 V
2.5 V
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
2
ID = 0.2 A
TJ = 25°C
0.8
TJ = 125°C
0.4
0
0 1 23 4
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
1
VGS = 10 V
0.8
TJ = 125°C
5
6 0.6
4 0.4 TJ = 25°C
2 0.2 TJ = −55°C
0
2.4 2.8 3.2 3.6
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0
0 0.1 0.2 0.3 0.4 0.5 0.6
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Temperature
1.80
1.60
ID = 0.3 A
VGS = 4.5 V
1000
VGS = 0 V
1.40
TJ = 150°C
1.20
1.00
0.80
100
TJ = 125°C
0.60
−25 −50
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10
0 5 10 15 20 25 30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
Rev .O 3/5










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