S-LNTK3043PT5G PDF даташит
Спецификация S-LNTK3043PT5G изготовлена «LRC» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | S-LNTK3043PT5G |
Описание | Power MOSFET ( Transistor ) |
Производители | LRC |
логотип |
5 Pages
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LESHAN RADIO COMPANY, LTD.
Power MOSFET
20 V, 285 mA, P−Channel with ESD
Protection, SOT−723
Features
• Enables High Density PCB Manufacturing
• 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89
• Low Voltage Drive Makes this Device Ideal for Portable Equipment
• Low Threshold Levels, VGS(TH) < 1.3 V
• Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin
Environments such as Portable Electronics
• Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels Using the Same Basic Topology
• These are Pb−Free Devices
• S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
Applications
• Interfacing, Switching
• High Speed Switching
• Cellular Phones, PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
tv5s
Steady
State
tv5s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
20 V
±10 V
255
185 mA
285
440
mW
545
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
210
mA
155
310 mW
Pulsed Drain Current
tp = 10 ms
IDM
Operating Junction and Storage Temperature TJ, TSTG
400
−55 to
150
mA
°C
Source Current (Body Diode) (Note 2)
IS 286 mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
LNTK3043PT5G
S-LNTK3043PT5G
V(BR)DSS
20 V
RDS(on) TYP
1.5 W @ 4.5 V
2.4 W @ 2.5 V
5.1 W @ 1.8 V
6.8 W @ 1.65 V
Top View
3
ID Max
285 mA
12
1 − Gate
2 − Source
3 − Drain
MARKING
DIAGRAM
SOT−723
CASE 631AA
KB
1
KB = Device Code
M = Date Code
ORDERING INFORMATION
Device
LNTK3043PT5G
S-LNTK3043PT5G
Package
Shipping †
SOT−723* 8000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*These packages are inherently Pb−Free.
Rev .O 1/5
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LESHAN RADIO COMPANY, LTD.
LNTK3043PT5G , S-LNTK3043PT5G
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction−to−Ambient – Steady State (Note 3)
RqJA
Junction−to−Ambient – t = 5 s (Note 3)
RqJA
Junction−to−Ambient – Steady State Minimum Pad (Note 4)
RqJA
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface−mounted on FR4 board using the minimum recommended pad size.
Max
280
228
400
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Condition
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
VGS = 0 V, ID = 100 mA
ID = 100 mA, Reference to 25°C
V(BR)DSS
V(BR)DSS/TJ
20
27
V
mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
VGS = 0 V,
VDS = 16 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±5 V
IDSS
IGSS
1
mA
10
1 mA
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
VGS = 4.5V, ID = 10 mA
VGS = 4.5V, ID = 255 mA
VGS = 2.5 V, ID = 1 mA
VGS = 1.8 V, ID = 1 mA
VGS = 1.65 V, ID = 1 mA
Forward Transconductance
VDS = 5 V, ID = 100 mA
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS(TH)
VGS(TH)/TJ
RDS(ON)
gFS
0.4 1.3
−2.4
1.5 3.4
1.6 3.8
2.4 4.5
5.1 10
6.8 15
0.275
V
mV/°C
W
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0 V, f = 1 MHz, VDS = 10 V
SWITCHING CHARACTERISTICS, VGS= 4.5 V (Note 4)
CISS
COSS
CRSS
11
8.3 pF
2.7
Turn−On Delay Time
td(ON)
13
Rise Time
Turn−Off Delay Time
VGS = 4.5 V, VDD = 5 V, ID = 10 mA,
RG = 6 W
tr
td(OFF)
15
94
ns
Fall Time
tf 55
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VGS = 0 V, IS= 286 mA
TJ = 25°C
TJ = 125°C
Charge Time
Discharge Time
VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/ms,
IS = 286 mA
Reverse Recovery Charge
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
VSD
tRR
ta
tb
QRR
0.83 1.2
0.69
9.1
7.1
2.0
3.7
V
ns
nC
Rev .O 2/5
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LESHAN RADIO COMPANY, LTD.
LNTK3043PT5G , S-LNTK3043PT5G
TYPICAL PERFORMANCE CURVES
0.3 0.3
VGS = 3 V to 10 V
2.5 V
TJ = 25°C
VDS ≥ 5 V
0.2 0.2
2.2 V
2.0 V
0.1
1.8 V
1.6 V
0 1.4 V
0 1 2 3 45
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
5
ID = 0.255 A
TJ = 25°C
4
0.1
0
1
TJ = 125°C
TJ = 25°C
TJ = −55°C
1.5 2 2.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
6
TJ = 25°C
5
34
VGS = 2.5 V
23
1
0
1 23456789
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
10
2
VGS = 4.5 V
1
0 0.1 0.2 0.3
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
−50
VGS = 1.65 V, ID = 1 mA
VGS = 1.8 V, ID = 10 mA
VGS = 2.5 V, ID = 10 mA
VGS = 4.5 V, ID = 10 mA
−25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1000
VGS = 0 V
100
10
TJ = 150°C
TJ = 125°C
1
5 10 15 20
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
Rev .O 3/5
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S-LNTK3043PT5G | Power MOSFET ( Transistor ) | LRC |
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