S-LNTA7002NT1G PDF даташит
Спецификация S-LNTA7002NT1G изготовлена «LRC» и имеет функцию, называемую «Small Signal MOSFET». |
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Детали детали
Номер произв | S-LNTA7002NT1G |
Описание | Small Signal MOSFET |
Производители | LRC |
логотип |
5 Pages
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LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
30 V, 154 mA, Single, N−Channel, Gate
ESD Protection, SC−89
Features
• Low Gate Charge for Fast Switching
• Small 1.6 X 1.6 mm Footprint
• ESD Protected Gate
• We declare that the material of product is ROHS compliant
and halogen free.
• ESDD PPrrootteecctteedd:2:105000VV
• ES-SPDrePfirxotfeocrteAdu:t1o5m0o0tVive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Applications
• Power Management Load Switch
• Level Shift
• Portable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady State = 25°C
VDSS
VGS
ID
30
"10
154
V
V
mA
Power Dissipation
(Note 1)
Steady State = 25°C PD
300 mW
Pulsed Drain Current
tP v 10 ms
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IDM
TJ,
TSTG
ISD
TL
618
−55 to
150
154
260
mA
°C
mA
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
416 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
LNTA7002NT1G
S-LNTA7002NT1G
SC-89
Gate 1
3 Drain
Source 2
(Top View)
MARKING DIAGRAM
3
T6
12
T6 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Marking Shipping
LNTA7002NT1G
S-LNTA7002NT1G
T6
3000/Tape&Reel
LNTA7002NT3G
S-LNTA7002NT3G
T6
10000/Tape&Reel
Rev .O 1/5
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LESHAN RADIO COMPANY, LTD.
LNTA7002NT1G , S-LNTA7002NT1G
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
V(BR)DSS
IDSS
IDSS
VGS = 0 V, ID = 100 mA
VGS = 0 V, VDS = 30 V
VGS = 0 V, VDS = 20 V,
T = 85 °C
Gate−to−Source Leakage Current
Gate−to−Source Leakage Current
Gate−to−Source Leakage Current
IGSS
IGSS
IGSS
VDS = 0 V, VGS = ±10 V
VDS = 0 V, VGS = ±5 V
VDS = 0 V, VGS = ±5 V
T = 85 °C
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
CAPACITANCES
VGS(TH)
RDS(on)
gFS
VDS = VGS, ID = 100 mA
VGS = 4.5 V, ID = 154 mA
VGS = 2.5 V, ID = 154 mA
VDS = 3 V, ID = 154 mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3)
CISS
COSS
CRSS
VDS = 5.0 V, f = 1 MHz,
VGS = 0 V
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Drain−Source Diode Characteristics
td(ON)
tr
td(OFF)
tf
VGS = 4.5 V, VDS = 5.0 V,
ID = 75 mA, RG = 10 W
Forward Diode Voltage
VSD VGS = 0 V, IS = 0.154 mA
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
30
0.5
Typ Max Unit
V
1.0 mA
1.0 mA
±25 mA
±1.0 mA
±1.0 mA
1.0 1.5 V
1.4 7.0
W
2.3 7.5
80 mS
11.5
10 pF
3.5
13 ns
15
98 ns
60
0.77 0.9 V
Rev .O 2/5
No Preview Available ! |
LESHAN RADIO COMPANY, LTD.
LNTA7002NT1G , S-LNTA7002NT1G
TYPICAL PERFORMANCE CURVES
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
VGS = 10 V
5V
2.8 V
2.4 V
TJ = 25°C
2V
1.4 V
1.2 V
0.4 0.8
1.2 1.6
2.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0.2
VDS = 5 V
0.16
0.12
0.08
0.04
0
0.6
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.8 1 1.2 1.4 1.6 1.8 2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.5
VGS = 4.5 V
2
TJ = 125°C
2.5
TJ = 25°C
2
VGS = 2.5 V
1.5
TJ = 25°C
1
TJ = −55°C
0.5
0
0.05 0.1 0.15
ID, DRAIN CURRENT (AMPS)
0.2
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.5
VGS = 4.5 V
1
0.5
0
0.05 0.1 0.15
ID, DRAIN CURRENT (AMPS)
0.2
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
1.8
ID = 0.15 A
VGS = 4.5 V
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1000
VGS = 0 V
100
TJ = 150°C
10
TJ = 125°C
1
0 5 10 15 20 25 30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
Rev .O 3/5
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S-LNTA7002NT1G | Small Signal MOSFET | LRC |
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