S-LNST3904F3T5G PDF даташит
Спецификация S-LNST3904F3T5G изготовлена «LRC» и имеет функцию, называемую «NPN General Purpose Transistor». |
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Детали детали
Номер произв | S-LNST3904F3T5G |
Описание | NPN General Purpose Transistor |
Производители | LRC |
логотип |
4 Pages
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LESHAN RADIO COMPANY, LTD.
NPN General Purpose
Transistor
The LNST3904F3T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is
designed for general purpose amplifier applications and is housed in
the SOT−1123 surface mount package. This device is ideal for
low−power surface mount applications where board space is at a
premium.
Features
• hFE, 100−300
• Low VCE(sat), ≤ 0.4 V
• Reduces Board Space
• This is a Pb−Free Device
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LNST3904F3T5G
S-LNST3904F3T5G
COLLECTOR
3
1
BASE
2
EMITTER
LNST3904F3T5G
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
40 Vdc
60 Vdc
6.0 Vdc
200 mAdc
Characteristic
Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol
PD
(Note 1)
Max
290
2.3
Unit
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
(Note 1)
432
°C/W
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD 347 mW
(Note 2) 2.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
(Note 2)
360
°C/W
Thermal Resistance,
Junction−to−Lead 3
RYJL
(Note 2)
143
°C/W
Junction and Storage Temperature Range TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm2 1 oz, copper traces.
2. 500 mm2 1 oz, copper traces.
3
12
SOT−1123
CASE 524AA
STYLE 1
MARKING DIAGRAM
2M
2 = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
LNST3904F3T5G SOT−1123 8000/Tape & Reel
S-LNST3904F3T5G (Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Rev.O 1/4
No Preview Available ! |
LESHAN RADIO COMPANY, LTD.
LNST3904F3T5G ;S-LNST3904F3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc)
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
Fall Time
(IB1 = IB2 = 1.0 mAdc)
3. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
NF
td
tr
ts
tf
Min
40
60
6.0
−
40
70
100
60
30
−
−
0.65
−
200
−
−
−
−
−
−
−
Max Unit
− Vdc
− Vdc
− Vdc
50 nAdc
−
−
−
300
−
−
Vdc
0.2
0.3
Vdc
0.85
1.0
− MHz
4.0 pF
8.0 pF
5.0 dB
35
35 ns
275
ns
50
0.28
0.23
IC/IB = 10
VCE(sat) = 150°C
0.18
0.13
25°C
−55°C
0.08
0.03
0.0001 0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
400
350 150°C (5.0 V)
300 150°C (1.0 V)
250 25°C (5.0 V)
200 25°C (1.0 V)
150 −55°C (5.0 V)
100 −55°C (1.0 V)
50
0
0.0001 0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain vs. Collector Current
Rev.O 2/4
No Preview Available ! |
LESHAN RADIO COMPANY, LTD.
LNST3904F3T5G ;S-LNST3904F3T5G
1.1
IC/IB = 10
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4 150°C
0.3
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
1
2.0
1.8
1.6 IC = 100 mA
1.4
1.2 80 mA
1.0
0.8
0.6
0.4
20 mA
0.2
0
0.0001
60 mA
40 mA
0.001
Ib, BASE CURRENT (A)
Figure 5. Saturation Region
0.01
1.1
VCE = 2.0 V
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4 150°C
0.3
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
1
8.0
7.5
7.0
6.5
6.0
5.5 Cib
5.0
4.5
4.0
3.5
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Veb, EMITTER BASE VOLTAGE (V)
Figure 6. Input Capacitance
3.0
2.5
2.0
1.5
1.0
0.5
0
Cob
5.0 10 15 20 25
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
30
Rev.O 3/4
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