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STM6708 PDF даташит

Спецификация STM6708 изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв STM6708
Описание N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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STM6708 Даташит, Описание, Даташиты
STM6708Green
Product
SamHop Microelectronics Corp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
10 @ VGS=10V
60V 15A
13.5 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S O-8
1
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous c
IDM -Pulsed a c
TC=25°C
TC=70°C
EAS Single Pulse Avalanche Energy d
TC=25°C
PD Maximum Power Dissipation
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
60
±20
15
12
75
225
2.5
1.6
-55 to 150
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Sep,05,2014
www.samhop.com.tw









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STM6708 Даташит, Описание, Даташиты
STM6708
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr
tD(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=7.5A
VGS=4.5V , ID=6.5A
VDS=10V , ID=7.5A
VDS=25V,VGS=0V
f=1.0MHz
VDD=30V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=30V,ID=7.5A,VGS=10V
VDS=30V,ID=7.5A,VGS=4.5V
VDS=30V,ID=7.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=3A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
e.Mounted on FR4 Board of 1 inch2 , 2oz.
Min Typ Max Units
60 V
1 uA
±100 nA
1 1.6 3
V
8 10 m ohm
11 13.5 m ohm
21 S
4250
247
216
pF
pF
pF
57 ns
61 ns
173 ns
50 ns
55 nC
26 nC
4.5 nC
14 nC
0.76 1.3
V
Sep,05,2014
2 www.samhop.com.tw









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STM6708 Даташит, Описание, Даташиты
STM6708
60
VGS=4V
50 VGS=4.5V
40 VGS=10V
VGS=3.5V
30
20 VGS=3V
10
0
0 0.5 1 1.5 2 2.5 3
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
18
15
12 VGS=4.5V
9
VGS=10V
6
3
0
1 12 24 36 48 60
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
15
12
9
Tj=125 C
6
25 C -55 C
3
0
0 0.9 1.8 2.7 3.6 4.5 5.4
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.2
2.0
1.8
VGS=10V
ID=7.5A
1.6
1.4
1.2
VGS=4.5V
1.0 ID=6.5A
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.3
1.2
VDS=VGS
ID=250uA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Sep,05,2014
3 www.samhop.com.tw










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