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CPH5604 PDF даташит

Спецификация CPH5604 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «Ultrahigh-Speed Switching Applications».

Детали детали

Номер произв CPH5604
Описание Ultrahigh-Speed Switching Applications
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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CPH5604 Даташит, Описание, Даташиты
Ordering number:ENN6440
N-Channel Silicon MOSFET
CPH5604
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
· Composite type with 2 MOSFETs contained in a
single package, facilitaing high-density mounting.
Package Dimensions
unit:mm
2168
[CPH5604]
2.9
543
0.15
0.05
1
0.95
2
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
0.4
PW10µs, duty cycle1%
Mounted on a ceramic board (600mm2×0.8mm) 1unit
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : FD
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=700mA
ID=700mA, VGS=10V
ID=400mA, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
SANYO : CPH5
Ratings
30
±20
1.4
5.6
0.9
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
30 V
10 µA
±10 µA
1 2.4 V
1.2 1.7
S
230 300 m
350 490 m
90 pF
50 pF
22 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2666 No.6440-1/4









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CPH5604 Даташит, Описание, Даташиты
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Electrical Connection
G1 S G2
D1 D2
(Top view)
CPH5604
Symbol
Conditions
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=1.4A
VDS=10V, VGS=10V, ID=1.4A
VDS=10V, VGS=10V, ID=1.4A
IS=1.4A, VGS=0
Ratings
min typ max
Unit
7 ns
8 ns
18 ns
8 ns
5 nC
1 nC
1 nC
0.92
1.2 V
Switching Time Test Circuit
VIN
10V
0V
PW=10µs
D.C.1%
VIN
G
VDD=15V
ID=700mA
RL=21.4
VOUT
D
P.G 50
CPH5604
S
ID -- VDS
2.0
1.8
1.6
6.0V 4.0V
3.5V
1.4
1.2
1.0
3.0V
0.8
0.6
0.4
0.2 2.5V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS – V IT01096
RDS(on) -- VGS
800
Ta=25°C
700
600
500
400
300 ID=400mA
700mA
200
100
0
0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS – V IT01098
4.0
VDS=10V
3.5
ID -- VGS
3.0
2.5
2.0
1.5
1.0
0.5
0
0
600
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Gate-to-Source Voltage, VGS – V
RDS(on) -- Ta
IT01097
500
400
300
I DI=D4=0700m0Am,AV,GVSG=4SV=10V
200
100
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – °C
IT01099
No.6440-2/4









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CPH5604 Даташит, Описание, Даташиты
CPH5604
10 yfs-- ID
10
7
VDS=10V
7
5
53
2
3
2
1.0
7
5
Ta=--25°C
75°C
25°C
3
1.0
7
5
3
2
0.1
7
5
23
2
0.1
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Drain Current, ID – A
IT01100
100 SW Time -- ID
7
VDD=15V
VGS=10V
5
tr
3
2 td(off)
0.01
0
1000
7
5
3
2
IF -- VSD
VGS = 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Diode Forward Voltage, VSD – V IT01101
Ciss, Coss, Crss -- VDS
f=1MHz
10 tf
7
5 td(on)
3
2
1.0
0.1
23
10
9
VDS=10V
ID=1.4A
8
5 7 1.0
23
Drain Current, ID – A
VGS -- Qg
5 7 10
IT01102
7
6
5
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Total Gate Charge, Qg – nC
IT01104
PD -- Ta
1.2
100 Ciss
7
5 Coss
3
2 Crss
10
0 5 10 15 20 25
Drain-to-Source Voltage, VDS – V
ASO
10
7 IDP=5.6A
100µs
5
3
1ms
2 ID=1.4A
1.0
7
5
3
2 Operation in
10ms
DC
100ms
operation
0.1 this area is
7 limited by RDS(on).
5
Ta=25°C
3 Single pulse
2 1 unit
0.01 Mounted on a ceramic board (600mm2×0.8mm)
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Drain-to-Source Voltage, VDS – V
30
IT01103
5 7 100
IT01105
1.0
0.9
0.8
0.6
0.4
0.2
Mounted on a ceramic board (600mm 2×0.8mm) 1 unit
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – °C
IT01106
No.6440-3/4










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