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AWB7228 PDF даташит

Спецификация AWB7228 изготовлена ​​​​«ANADIGICS» и имеет функцию, называемую «Small-Cell Power Amplifier Module».

Детали детали

Номер произв AWB7228
Описание Small-Cell Power Amplifier Module
Производители ANADIGICS
логотип ANADIGICS логотип 

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AWB7228 Даташит, Описание, Даташиты
FEATURES
InGaP HBT Technology
-47 dBc ACPR @ 6 10 MHz, +27 dBm
• 27 dB Gain
High Efficiency
• Low Transistor Junction Temperature
Matched for a 50 System
Low Profile Miniature Surface Mount Package;
RoHS Compliant
Multi-Carrier Capability
AWB7228
2.545 - 2.69 GHz
Small-Cell Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.2
APPLICATIONS
LTE, WCDMA and HSDPA Air Interfaces
FDD and TDD Systems
Picocell, Femtocell, Home Nodes
Customer Premises Equipment (CPE)
Data Cards and Terminals
14 Pin 7 mm x 7 mm x 1.3 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWB7228 is a fully matched, Multi-Chip-Module
(MCM) designed for picocell, femtocell, and customer
premises equipment (CPE) applications. Its high
linearity and efficiency meet the extremely demanding
needs of small cell infrastructure architectures.
Designed for LTE,WCDMA and HSDPA air interfaces
operating in the 2.545 GHz to 2.69 GHz band, the
AWB7228 delivers up to +27 dBm of LTE (E-TM1.1)
power with an ACPR of -47 dBc. It operates from
a convenient +4.5 V supply and provides 27 dB of
gain. The device is manufactured using an advanced
InGaP HBT MMIC technology offering state-of-the-
art reliability, temperature stability, and ruggedness.
The self-contained 7 mm x 7 mm x 1.3 mm surface
mount package incorporates RF matching networks
optimized for output power, efficiency, and linearity in
a 50 Ω system.
Vcc 1 Vcc 2
RF Input
Matching
Network
Bias
Network
Matching
Network
Matching
Network
Bias
Network
Matching
Network
Power
Detector
VREF
VDET
Figure 1: Block Diagram
09/2012
RF Output









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AWB7228 Даташит, Описание, Даташиты
AWB7228
VREF 1
14 GND
GND 2
GND 3
13 GND
12 RFOUT
VCC1 4
RFIN 5
11 VCC2
10 GND
GND 6
9 GND
VDET 7
8 GND
GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN NAME DESCRIPTION
1 VREF Reference Voltage
2 GND Ground
3 GND Ground
4
VCC1
Supply Voltage
5 RFIN RF Input
6 GND Ground
7 VDET Detector Voltage
8 GND Ground
9 GND Ground
10 GND Ground
11
VCC2
Supply Voltage
12 RFOUT RF Output
13 GND Ground
14 GND Ground
2
PRELIMINARY DATA SHEET - Rev 1.2
09/2012









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AWB7228 Даташит, Описание, Даташиты
AWB7228
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN MAX UNIT
Supply Voltage (VCC)
0 +5 V
Reference Voltage (VREF)
0 +3.5 V
RF Output Power (POUT)
- +30 dBm
ESD Rating
Human Body Model (1)
Charged Device Model (2)
Class 1C
Class IV
-
-
MSL Rating (3)
4-
Junction Temperature (Tj)
-
+150
°C
Storage Temperature (TSTG)
-40 +150
°C
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure to
absolute ratings for extended periods of time may adversely affect reliability.
Notes:
(1) JEDEC JS-001-2010.
(2) JEDEC JESD22-C101D.
(3) 260 °C peak reflow.
PARAMETER
Table 3: Operating Ranges
MIN TYP MAX UNIT
COMMENTS
Operating Frequency (f)
2545
- 2690 MHz
Supply Voltage (VCC)
+3.6 +4.5 +4.65
V
Reference Voltage (VREF)
+2.75 +2.85 +2.95
0 - +0.5
V
PA "on"
PA "shut down"
RF Output Power (POUT)
- +27 - dBm
Case Temperature (TC)
-40 - +85 °C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
3
PRELIMINARY DATA SHEET - Rev 1.2
09/2012










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