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AWB7225 PDF даташит

Спецификация AWB7225 изготовлена ​​​​«ANADIGICS» и имеет функцию, называемую «Small-Cell Power Amplifier Module».

Детали детали

Номер произв AWB7225
Описание Small-Cell Power Amplifier Module
Производители ANADIGICS
логотип ANADIGICS логотип 

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AWB7225 Даташит, Описание, Даташиты
FEATURES
InGaP HBT Technology
-47 dBc ACPR @ 610 MHz, +27 dBm
• 29 dB Gain
High Efficiency
• Low Transistor Junction Temperature
Matched for a 50 System
Low Profile Miniature Surface Mount Package;
RoHS Compliant
Multi-Carrier Capability
APPLICATIONS
LTE, WCDMA, and HSDPA Air Interfaces
Picocell, Femtocell, Home Nodes
Customer Premises Equipment (CPE)
AWB7225
860 - 894 MHz
Small-Cell Power Amplifier Module
ADVANCED PRODUCT INFORMATION - Rev 0.1
14 Pin 7 mm x 7 mm x 1.3 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWB7225 is a fully matched, Multi-Chip-Module
(MCM) designed for picocell, femtocell, and customer
premises equipment (CPE) applications. Consisting of
two parallel path high linearity, high efficiency power
amplifiers, the device meets the extremely demanding
needs of small cell infrastructure architectures.
Designed for LTE, WCDMA and HSDPA air interfaces
operating in the 860 MHz to 894 MHz bands, the
AWB7225 delivers up to +27 dBm of LTE (E-TM1.1)
power through an external 90-degree hybrid coupler,
with an ACPR of -47 dBc. The device operates from
a convenient +4.5 V supply and provides 29 dB of
RF gain. The AWB7225 is manufactured using an
advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. Its 7 mm x 7 mm x 1.3 mm surface
mount package incorporates RF matching networks
optimized for output power, efficiency, and linearity in
a 50 V system.
Vcc1 Vcc2
RF Input
Source
RF1 Input
90o Hybrid
Coupler
(external )
RF2 Input
Matching
Network
Bias
Network
Matching
Network
Bias
Network
Power
Detector
Power
Detector
Matching
Network
RF1 Output
90o Hybrid
Coupler
(external )
Matching
Network
RF2 Output
Combined
RF Output
Vref Detector
Output
Figure 1: Block Diagram
01/2012









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AWB7225 Даташит, Описание, Даташиты
AWB7225
VREF 1
14 GND
GND 2
RF2IN 3
VCC1 4
RF1IN 5
N/C 6
13 GND
12 RF2OUT
11 VCC2
10 RF1OUT
9 GND
DETOUT 7
8 GND
GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN NAME DESCRIPTION
1 VREF Reference Voltage
2 GND Ground
3 RF2IN RF2 Input
4
VCC1
Supply Voltage
5 RF1IN RF1 Input
6 N/C No Connection
7 DETOUT Detector Output
8 GND Ground
9 GND Ground
10 RF1OUT RF1 Output
11
VCC2
Supply Voltage
12 RF2OUT RF2 Output
13 GND Ground
14 GND Ground
2
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2012









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AWB7225 Даташит, Описание, Даташиты
AWB7225
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN MAX UNIT
Supply Voltage (VCC)
0 +5
V
Reference Voltage (VREF)
0 +3.5
V
RF Output Power (POUT)
-
+30(1)
dBm
Storage Temperature (TSTG)
-40 +150
°C
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Notes:
(1) At output of external 90 8 hybrid coupler.
PARAMETER
Table 3: Operating Ranges
MIN TYP MAX UNIT
COMMENTS
Operating Frequency (f)
860 - 894 MHz
Supply Voltage (VCC)
+3.6 +4.5 +4.65
V
Reference Voltage (VREF)
+2.75 +2.85 +2.95
0 - +0.5
V
PA "on"
PA "shut down"
RF Output Power (POUT)
- +27 - dBm Using external 90hybrid couplers
Case Temperature (TC)
-40 - +85 °C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
3
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2012










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