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AWB7221 PDF даташит

Спецификация AWB7221 изготовлена ​​​​«ANADIGICS» и имеет функцию, называемую «Small-Cell Power Amplifier Module».

Детали детали

Номер произв AWB7221
Описание Small-Cell Power Amplifier Module
Производители ANADIGICS
логотип ANADIGICS логотип 

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AWB7221 Даташит, Описание, Даташиты
FEATURES
InGaP HBT Technology
2.5% EVM @ +28 dBm (OFDMA)
• 31 dB Gain
• Integrated Step Attenuator
• Integrated Output Power Detector
• High Efficiency
• Low Transistor Junction Temperature
Matched for a 50 System
• Low Profile Miniature Surface Mount Package;
RoHS Compliant
APPLICATIONS
WiMAX and LTE Air Interfaces
Picocell, Femtocell, Home Nodes
Customer Premises Equipment (CPE)
Data Cards and Terminals
AWB7221
2.30 GHz to 2.70 GHz
Small-Cell Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.1
M52 Package
14 Pin 7 mm x 7 mm x 1.3 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWB7221 is a fully matched, Multi-Chip-Module
(MCM) designed for picocell, femtocell, and customer
premises equipment (CPE) applications. Its high
linearity and efficiency meet the extremely demanding
needs of small cell infrastructure architectures.
Designed for WiMAX and LTE air interfaces operating
in the 2.30 GHz to 2.70 GHz band, the AWB7221
delivers up to +28 dBm of WiMAX power with
exceptionally low EVM. It operates from a convenient
+4.2 V supply and provides more than 30 dB of gain.
The device is manufactured using an advanced
InGaP HBT MMIC technology offering state-of-the-
art reliability, temperature stability, and ruggedness.
The self-contained 7 mm x 7 mm x 1.3 mm surface
mount package incorporates RF matching networks
optimized for output power, efficiency, and linearity in
a 50 Ω system.
Vcc 1 Vcc 2
RF Input
Step
Attenuator
Bias
Network
Matching
Network
Step
Attenuator
Bias
Network
Matching
Network
Power
Detector
Attenuator Control
VENB
Detector Output
Figure 1: Block Diagram
12/2011
RF Output









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AWB7221 Даташит, Описание, Даташиты
AWB7221
VENB 1
14 GND
GND 2
GND 3
13 GND
12 RFOUT
VCC1
RFIN
VATTN
4
5
6
11 VCC2
10 GND
9 GND
VDET 7
8 GND
GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN NAME DESCRIPTION
1
VENB
Enable Voltage
2 GND Ground
3 GND Ground
4 VCC1 Supply Voltage
5 RFIN RF Input
6
VATTN
Attenuator Control
7
VDET
Detector Output
8 GND Ground
9 GND Ground
10 GND Ground
11
VCC2
Supply Voltage
12 RFOUT RF Output
13 GND Ground
14 GND Ground
2
PRELIMINARY DATA SHEET - Rev 1.1
12/2011









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AWB7221 Даташит, Описание, Даташиты
AWB7221
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN MAX UNIT
Supply Voltage (VCC)
0 +5
V
Enable Voltage (VENB)
0 +3.2
V
Attenuator Control Voltage (VATTN)
- +3.7
V
RF Input Power (PIN)
- +3.0 dBm
Junction Temperature (Tj)
- +150 °C
Storage Temperature (TSTG)
-40 +150
°C
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
PARAMETER
Table 3: Operating Ranges
MIN TYP MAX UNIT
COMMENTS
Operating Frequency (f)
2300
- 2700 MHz
Supply Voltage (VCC)
+3.3 +4.2 +4.5
V
Enable Voltage (VENB)
+2.80 +2.85 +3.1
0 - +0.5
V
PA "on"
PA "shut down"
Attenuator Control Voltage (VATTN)
Logic High
Logic Low
+2.3
0
- +3.7
- +0.7
V Attenuator Enabled
V Attenuator Disabled
RF Output Power (POUT)
- +28 - dBm
Case Temperature (TC)
-40 - +85 °C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
3
PRELIMINARY DATA SHEET - Rev 1.1
12/2011










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