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PDF AWB7123 Data sheet ( Hoja de datos )

Número de pieza AWB7123
Descripción Small-Cell Power Amplifier Module
Fabricantes ANADIGICS 
Logotipo ANADIGICS Logotipo



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FEATURES
InGaP HBT Technology
-50 dBc ACPR @ + 5 MHz, +24.5 dBm
• 30 dB Gain
High Efficiency
• Low Transistor Junction Temperature
Internally Matched for a 50 System
Low Profile Miniature Surface Mount Package;
Halogen Free and RoHS Compliant
Multi-Carrier Capability
AWB7123
1.93 GHz through 1.99 GHz
Small-Cell Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.3
APPLICATIONS
WCDMA, HSDPA and LTE Air Interfaces
Picocell, Femtocell, Home Nodes
Customer Premises Equipment (CPE)
Data Cards and Terminals
M41 Package
14 Pin 7 mm x 7 mm x 1.3 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWB7123 is a highly linear, fully matched, power
amplifier module designed for picocell, femtocell, and
customer premises equipment (CPE) applications.
Its high power efficiency and low adjacent channel
power levels meet the extremely demanding needs of
small cell infrastructure architectures. Designed for
WCDMA, HSDPA, and LTE air interfaces operating
in the 1.93 GHz to 1.99 GHz band, the AWB7123
delivers up to +24.5 dBm of WCDMA (64 DPCH)
power with an ACPR of -50 dBc. It operates from
a convenient +4.2 V supply and provides 30 dB of
gain. The device is manufactured using an advanced
InGaP HBT MMIC technology offering state-of-the-
art reliability, temperature stability, and ruggedness.
The self-contained 7 mm x 7 mm x 1.3 mm surface
mount package incorporates RF matching networks
optimized for output power, efficiency, and linearity in
a 50 Ω system.
M a tch in g
Ne two r k
Bia s
Co n tr o l
M a tch in g
Ne two r k
Po we r
De te cto r
Figure 1: Block Diagram
06/2012

1 page




AWB7123 pdf
AWB7123
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to the VREF voltage.
VRE F
C15 C11
0.1 µF
1000 pF
Vcc1C1* C2* C3
C4
100µF 10 µF 0.1µF 1000 pF
RFI N
VDET
R2
100 K
C6
0.1µF
4.7 K
R1
1VR E F
GND 2
GND 3
Vcc1
RFI N
4
5
GND 6
7VDET
* Optional
AWB7123
14 GND
13 GND
12 RFOUT
11 Vcc2
10 GND
9 GND
C7
1000 pF
C8 C9*
0.1µF 10 µF
8 GND
RFOUT
C10*
100 µF
C12* Vcc2
100µF
Figure 3: Application Circuit Schematic
5
PRELIMINARY DATA SHEET - Rev 1.3
06/2012

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