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BAV19WS PDF даташит

Спецификация BAV19WS изготовлена ​​​​«WILLAS» и имеет функцию, называемую «Plastic-Encapsulate Diodes».

Детали детали

Номер произв BAV19WS
Описание Plastic-Encapsulate Diodes
Производители WILLAS
логотип WILLAS логотип 

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BAV19WS Даташит, Описание, Даташиты
WILLAS
SO1.0DA-S3U2R3FACPElaMsOUtiNcT-SECnHOcTaTKpYsBuAlRaRtIEeRDREioCTdIFeIEsRS -20V- 200V
SOD-123+ PACKAGE
BBAAVV1290WWFMSST1H2R0U-M+
BAV21FWMS1200-M+
Pb Free Product
FAST SWFIeTaCtHuINreGsDIODE
FEATUREBSatch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
z Fast LSowwitpcrhofinilegsSurpfaeceedmounted application in order to
Package outline
SOD-323
SOD-123H
z SurfaocpetimMizoeubnotaPrdascpkaacgee. Ideally Suited for Automatic Insertion
Low power loss, high efficiency.
z For GHeignhecruarlrePnut rcpaopsaebilSityw, liotcwhfionrgwaArdppvolilctaagteiodnrsop.
0.146(3.7)
0.130(3.3)
z Pb-FrHeigehpsaucrgkeacgaepaibsilaityv.ailable
RoH••SUGlputraraordhdriuignchgt-sffoporeroepvdeasrcvwkoiitlnctahgginecgop. rdoetescutioffnix. ”G”
HalogSeilnicofrneeeppitaroxidaul pcltafnoarr pchaicpk, imnegtaclosdiliecosnujfufinxctiHon.
z MoistLMueIraLed-S-SfTreeDen-1ps9ai5trt0isv0mi/t2ye2e8Lt eenvveirlo1nmental standards of
RoHS product for packing code suffix "G"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
Polarity: Color band denotes cathode end
MARKINGEp:oBxyA:VU1L99W4-VS0:rAat8ed flame retardant
0.040(1.0)
0.024(0.6)
CasBe :AMVo2ld0eWd pSla: sTti2c, SOD-123H
TermBinAaVls2:1PWlatSed:
tTer3minals,
solderable
per
,
MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Maximum RatingsMaenthdodE2l0e2c6trical Characteristics, Single Diode @Ta=25
Polarity : Indicated by cathode band
MounPtianrgaPmoestietiron : Any
Symbol
BAV19WS
Dimensions in inches and (millimeters)
BAV20WS
BAV21WS
Unit
Non-RepeWtietiivgehtP: eAapkprRoxeivmearsteedV0o.0lt1a1ggeram VRM
120
200
250
V
Peak RepetitiveMPAeXakIMRUevMerRseATVIoNltGagSeAND EVRLREMCTRICAL CHARACTERISTICS
WRoarktininggs aPte2a5kRaemvebiresnet tVeomlptaegraeture unless otherVwRisWeMspecified. 100
150
DCSinBglloecpkhiansge hVaolflwtaagvee, 60Hz, resistive of inductive VloRad.
 RMFoSr cRaepvaecirtisvee lVooadlt,adgeerate current by 20%
VR(RMS)
71
106
250
141
V
V
Forward ContinuousRACTuIrNrGenSt
Marking Code
AMveaxriamguemRReeccutirfreiendt POeauktpRuevteCrsuerVroelntatge
SIFYMMBOL FM120-MH FM130-MH FM140-MH 4FM00150-MH FM160-MH FM180-MH FM1100-MmH AFM1150-MH FM1200-MH U
12 13 14 15 16
18 10
115 120
IVORRM
20
30
40 20500
60
80
100 mA 150
200 V
PMeaaxkimFuomrwRMarSdVSolutarggee Current @t=1.0ms
VRMS
14
21
28 2.535
42
Maximum DC Blocking Voltage @ t=1.0s
IFSVMDC 20 30 40 0.550 60
56 70
105 140 V
80
100 A 150
200 V
  RMeapxeimtiutimveAvPeeraagke FFoorrwwaardrdReCctuifirerdeCnutrrent
IFR  MIO
625
1.0
 
A
mA  
PPoewakeFroDrwisarsdiSpuartgieoCnurrent 8.3 ms single half sine-wave PIdFSM
superimposed on rated load (JEDEC method)
250 30 mW A
TThyepricmalaTlhReermsaisl RtaensicsetanJcuen(cNtoitoen2)to
ATmypbiciealnJtunction Capacitance (Note 1)
SOtoprearagtiengTTeemmppeerraatuturerReange
Storage Temperature Range
RRθJΘAJA
CJ
TTSTJG
TSTG
 
 
-55 to +125
500
-55~+150
40
120
 
- 65 to +175
 
 
/W
-55 to +150
E  lectrical RatingCsHA@RATCaTE=R2I5STICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Forward Voltage at 1.0A DC
Maximum AveragPe aRreavmerseeteCrurrent at
VF
@T A=25℃ SymbIRol
Rated DC Blocking Voltage
@T A=125℃
 
FNoOrTwEaSr:d voltage
1- Measured at 1 MHZ
and
applied
reverse
voltage
of
4.0
VF1
VDVCF. 2
Min
0.50
Typ
0.70
Max
1.0
1.25
0U.5nit
10
V
0.85
0.9
Conditions
IF=0.1A
IF=0.2A
0.92
 
V
m
R2e- vTheerrsmealcRuersrisetanntce From Junction tBo AAmVb1ie9nWt S
 
  BAV20WS
IR
0.1
0.1 μA
VR=100V
VR=150V
BAV21WS
0.1 VR=200V
Capacitance between terminals
CT
5 pF VR=0V,f=1MHz
Rev2e0rs1e2r-e0co6very time
2012-1
trr
IF=IR=30mA
50 ns
WILLAIrrS=0E.1LXIER,CRLT=R10O0NIC CORP
WILLAS ELECTRONIC CORP.









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BAV19WS Даташит, Описание, Даташиты
WILLAS
SO1.0DA-S3U2RF3ACPElMaOsUtNicT-SECHnOcTaTKpYsBuAlRaRtIEeR DREiCoTdIFeIEsRS -20V- 200V
SOD-123+ PACKAGE
BBAAVV1290WWFMSST1H2R0U-M+
BAV21FWMS1200-M+
Pb Free Product
Features
Package outline
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
SOD-123H
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
High surge capability.
Typical Characteristics BAV19WSGuardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxiaFloprwlaanradr cChihpa,rmacetetarilsstiicliscon junction.
400
Lead-free parts meet environmental standards of
1000
Reverse Characteristics
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
300 Ta=100
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
100Halogen free product for packing code suffix "H"
Mechanical data
Epoxy : UL94-V0 rated flame retardant
30Case : Molded plastic, SOD-123H
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
10 Method 2026
100
30
10 0.031(0.8) Typ.
3
Ta=25
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Polarity : Indicated by cathode band
3Mounting Position : Any
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
1
0.3
1
0.2
MA0.4XIMUM0.6 RATI0N.8 GS AN1.0D ELE1.C2 TRIC1A.4 L CHARAC0.1T0 ERIST2I0CS 40
60
80
Ratings at 25℃ ambientFtOeRmWpAeRrDatVuOreLTuAnGlEessVoF th(Ve)rwise specified.
REVERSE VOLTAGE VR (V)
Single phase half wave, 60Hz, resistive of inductive load.
  For capacitive load, derate current by 20%
100
120
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
Maximum1.4Recurrent PeakCRapevaecristaenVcoeltCaghearacteristics VRRM
12
20
13 14
30 300 40
15
50
Pow16e60r Deratin18g80Curve
10
100
115 120
150 200 Vo
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum1.2Average Forward Rectified Current
VRMSTa=2514 21 28 35 42
f=1MHz
VDC 20 30 250 40 50 60
56 70 105 140 Vo
80 100 150 200 Vo
IO 1.0 Am
 
Peak Forward Surge Current 8.3 ms single half sine-wave
superimpo1.s0ed on rated load (JEDEC method)
 
IFSM
200
 
30
 
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating0.8Temperature Range
Storage Temperature Range
RΘJA
CJ
TJ
TSTG
 
  150
-55 to +125
100
40
120
 
- 65 to +175
 
 
-55 to +150
P
 
0.6
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH5F0M140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9 0.92 Vo
Maximum0.4Average Reverse Current at @T A=25℃
Rated DC B0locking Voltag5e
1@0 T A=125℃ 15
  REVERSE VOLTAGE VR (V)
IR
20
0 0.5
0
25
50 10 75
100 125 150
AMBIENT TEMPERATURE Ta ()
 
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.









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BAV19WS Даташит, Описание, Даташиты
SOD-323 Plastic-Encapsulate Diodes
BAV19WS
BAV20WS
BAV21WS
Outline Drawing SOD-323
.106(2.70)
.091(2.30)
.075(1.90)
.059(1.50)
.043(1.10)
.031(0.80)
.004(0.10)MAX.
2012-1
.008(0.20)
.004(0.10)
.016(0.40)
.010(0.25)
.010(0.25)MIN.
Dimensions in inches and (millimeters)
Rev.C
WILLAS ELECTRONIC CORP.










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