BAV19WS PDF даташит
Спецификация BAV19WS изготовлена «Taiwan Semiconductor» и имеет функцию, называемую «200mW High Voltage SMD Switching Diode». |
|
Детали детали
Номер произв | BAV19WS |
Описание | 200mW High Voltage SMD Switching Diode |
Производители | Taiwan Semiconductor |
логотип |
4 Pages
No Preview Available ! |
Small Signal Product
BAV19WS/BAV20WS/BAV21WS
Taiwan Semiconductor
200mW High Voltage SMD Switching Diode
FEATURES
- Surface mount device type
- Moisture sensitivity level 1
- Matte tin (Sn) lead finish
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: Flat lead SOD-323F small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 4.5 ± 0.5 mg
SOD-323F
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD 200
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Non-Repetitive Peak Forward
Surge Current
Pulse Width = 1 μs
Pulse Width = 1 s
VRRM
IF(AV)
IFSM
250
200
2.5
0.5
Junction and Storage Temperature Range
TJ , TSTG
-65 to 150
PARAMETER
SYMBOL
MIN
Breakdown Voltage
(Note 1)
BAV19WS
BAV20WS
BAV21WS
120
VR 200
250
Forward Voltage
IF=100mA
IF=200mA
VF
-
-
Reverse Leakage Current
(Note 2)
BAV19WS
BAV20WS
BAV21WS
IR -
Junction Capacitance
VR=0, f=1.0MHz
CJ
Reverse Recovery Time (Note 3)
trr
Note 1: Test condition : IR= 100μA
Note 2: Test condition : BAV19WS @ VR=100V, BAV20WS @ VR=150V, BAV21WS @ VR=200V
Note 3: Test condition : IF= IR= 30mA , RL=100Ω , Irr=3mA
-
-
MAX
-
-
-
1
1
100
5
50
UNIT
mW
V
mA
A
oC
UNIT
V
V
nA
pF
ns
Document Number: DS_S1501004
Version: D15
No Preview Available ! |
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
BAV19WS/BAV20WS/BAV21WS
Taiwan Semiconductor
Fig. 1 Typical Forward Characteristics
1
TA=150oC
TA=125oC
TA=75oC
0.1 TA=25oC
TA=0oC
TA=-40oC
0.01
0.001
0
0.2 0.4 0.6 0.8 1 1.2
VF, Instantaneous Forward Voltage (V)
1.4
100
10
1
0.1
0.01
0.001
0.0001
0
Fig. 2 Typical Reverse Characteristics
TA=125oC
TA=75oC
TA=25oC
TA=0oC
TA=-40oC
TA=150oC
50 100 150 200
VR, Instantaneous Reverse Voltage (V)
250
Fig. 3 Typical Capacitance VS. Reverse Voltage
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
f=1.0 MHz
10 20 30
VR, Reverse Voltage (V)
40
250
200
150
100
50
0
0
Fig. 4 Power Derating Curve
40 80 120 160
TA, ambient Temperature (oC)
200
Document Number: DS_S1501004
Version: D15
No Preview Available ! |
Small Signal Product
ORDER INFORMATION (EXAMPLE)
BAV19WS RRG
Green compound code
Packing code
Part no.
DIMENSIONS
SOD-323F
BAV19WS/BAV20WS/BAV21WS
Taiwan Semiconductor
DIM.
A
B
C
D
E
F
Unit (mm)
Min
1.15
2.30
0.25
1.60
0.80
0.05
Max
1.35
2.80
0.40
1.80
1.10
0.25
Unit (inch)
Min
0.045
0.091
0.010
0.063
0.031
0.002
Max
0.053
0.110
0.016
0.071
0.043
0.010
SUGGESTED PAD LAYOUT
DIM.
X
X1
Y
Unit (mm)
Typ.
0.710
2.900
0.403
Unit (inch)
Typ.
0.028
0.114
0.016
Note: 1. The suggested land pattern dimensions have been provided for refernece only, as actual pad layouts may vary depending on application.
MARKING
Part No.
BAV19WS
BAV20WS
BAV21WS
Marking
S5
S6
S7
Document Number: DS_S1501004
Version: D15
Скачать PDF:
[ BAV19WS.PDF Даташит ]
Номер в каталоге | Описание | Производители |
BAV19W | SURFACE MOUNT SWITCHING DIODE | TRSYS |
BAV19W | SURFACE MOUNT FAST SWITCHING DIODE | Won-Top Electronics |
BAV19W | SURFACE MOUNT FAST SWITCHING DIODE | Sunmate |
BAV19W | Small Signal Diodes | General Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |