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B772 PDF даташит

Спецификация B772 изготовлена ​​​​«WILLAS» и имеет функцию, называемую «Plastic-Encapsulate Transistors».

Детали детали

Номер произв B772
Описание Plastic-Encapsulate Transistors
Производители WILLAS
логотип WILLAS логотип 

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B772 Даташит, Описание, Даташиты
WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M
B772 THRU
FM1200-M
Pb Free Produ
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
TRANSISTORLoopwtimPpioNzwePebrolaorsds,shpiagchee. fficiency.
FEATURES••
High
High
current capability,
surge capability.
low
forward
voltage
drop.
Low speedsGwuaitrcdhriinnggfor overvoltage protection.
Pb-Free pa••cSUkilltaircagohneigeihps-itsaapxeviaealdiplslaawnbitaclrehcinhgip. , metal silicon junction.
RoHS produLcetafdo-rfrepeapcakritns gmeceot denevisrounfmfixentGalstandards of
MIL-STD-19500 /228
Halogen freeRopHrSopdruodcutctfoforr ppaacckikngincgodceosdufefixs"Gu"ffix “H”
Halogen free product for packing code suffix "H"
Mechanical data
MAXIMUMREpAoTxyIN: UGLS94(-TVa0=r2a5ted fluamnleersestarodtahnet rwise noted)
Symbol
Case : Molded Pplaarsatmic,eSteOrD-123H
Terminals :Plated terminals, solderable
per
Value Uni,t
MIL-STD-750
VCBO
Collector-BMaestehoVdo2lt0a2g6e
-40 V
VCEO
PCoolallreitcyto: rI-nEdmiciattteerdVboyltcaagtehode band
-30 V
VEBO
MEomuintteinr-gBPaosseitVioonlt:aAgney
-5 V
IC WCeoilglehct t:oArpCpurorrxeimnta-tCeodn0t.i0n1u1ougsram
-3 A
Package outline
SOT-89
1. BASE
SOD-123H
0.146(3.7)
0.130(3.3)
123
2. COLLETOR
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
3. EMITTER
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
PC CollecMtoAr XPIoMwUerMDiRssAipTaItNioGn S AND ELECT0R.5ICAL CWHARACTERISTICS
RӨJARatings atT2h5ermaalmRbeiseinsttatnecmep,ejurantcutrioenutnoleAsmsboitehnetrwise sp2ec5i0fied. /W
Tj Single phaJsuenhcatilof nwaTveem, 6p0eHrazt,urreesistive of inductive load. 150
 Tstg For capacSititvoeralogaed,Tdeemrapteercautrurreent by 20%
-55~150
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
Marking Code
12 13 14 15
ELECTMRaxIimCuAmLReCcuHrrAenRt PAeCakTREevRerIsSeTVIoCltaSge(Ta=25uVRnRlMess o2t0herwis30e spec4i0fied) 50
16
60
18 10
115 120
80 100 150 200
Maximum RMS Voltage
VRMS
14
21
28
MaximumPaDrCamBloectkeinrg Voltage
Symbol
VDC
Te2s0t cond3i0tions 40
ColleMcatxoimr-ubmasAevebrargeeaFkodrwoawrdnRveoctlitfaiegdeCurrent V(BR)CBO IO IC=-100μA ,IE=0
35 42
56 70
105
M50in 6T0 yp 80Max 100Unit 150
-40 1.0
V
140
200
Co llector-emitter breakdown voltage
Peak Forward Surge Current 8.3 ms single half
sinVe-(wBRa)vCeEO
 
IFSM
Emitstuepre-rbimapsoesebdroenaraktdedolwoand (vJoEDltEaCgemethod) V(BR)EBO
IC= -10mA , IB=0
IE= -100μA,IC=0
-30  
30
-5
V 
V
ColleTcyptoicralcTuhte-romfaflcRuersrisetanntce (Note 2)
ColleTcyptoicralcJuunt-cotioffncCuarpraecnitatnce (Note 1)
Operating Temperature Range
 ICBO
RΘJA VCB= -40V, IE=  0
ICEO
CJ
TJ
VCE=-30V-,5I5B=to0+125
40
120
 
-1   μA
-10-55 to +15μ0A
EmitStetorracguetT-oemffpceurartruerenRt ange
IEBO TSTG VEB=-6V, IC=0
- 65 to +175 -1
μA
DC  current gain
hFE VCE= -2V, IC= -1A 60
400
CHARACTERISTICS
ColleMcatxoimr-uemmFiottrwerarsdaVtoultraagteioant 1v.0oAltDaCge
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VCE(sat) VF IC=-2A, IB= -0.2A0.50
0.70
-00.5.85
V 0.9
0.92
BaseM-aexmimiuttmerAsveartaugreaRtieovnersveoCltuargreent at @T A=V25BE(sat)
Rated DC Blocking Voltage
@T A=125℃
Tra  nsition frequency
NOTES:
fT
IR IC=-2A, IB= -0.2A
VCE= -5V, IC=-0.1A
f =10MHz
0.5 -1.5
10
80
V
MHz
 
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
CLAS  SIFICATION OF hFE
 
Rank
R
O
Y GR
Range
60-120
100-200
160-320
200-400
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.









No Preview Available !

B772 Даташит, Описание, Даташиты
WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M
B772 THRU
FM1200-M
Pb Free Prod
Features
O u t l i n e D r a w i n gBatch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for pac.k1in8g1c(o4de.6s0uf)fix "H"
Mechanical data
.173(4.39)
Epoxy : UL94-V0 rated flame retardant
Package outline
S O T- 8 9SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
Case : Molded plastic, SOD-123H
Terminals
:Plated
terminals,.0so6ld1eRraEbFle
per
,
MIL-STD-750
Method 2026
Polarity
:
Indicated
by
(1.55)REF
cathode band
0.031(0.8) Typ.
.063(1.60)
.055(1.40)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Mounting Position : Any
Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
  For capacitive load, derate current by 20%
.167(4.25)
RATINGS
.154M(a3rk.i9ng1C) ode
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
.102(2.60)
SYMBOL FM120-MH FM130-M.0H9FM11(420-.M3H0F)M150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
12 13 14 15 16
18 10
115 120
.02V3RR(M0.58)20 30 40 50 60
80 100 150 200
.01V6RM(S0.40)14 21 28 35 42
56 70
105 140
Maximum DC Blocking Voltage
VDC 20 30 40 50 60
80 100 150 200
Maximum Average Forward Rectified Current
IO
1.0
  .047(1.2)
Peak Forward Surge Current 8.3 ms single half sine-wave
super.im0p3os1e(d0on.8ra)ted load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range .060TYP
Storage Temperature Range (1.50)TYP
 
 
IFSM
RΘJA
CJ
TJ
TSTG
 
 
-55 to +125
.197(0.52)
.013(0.32)
 
30
40
120
 
 
 
-55 to +150
- 65 to +175
.017(0.44)
 
CHARACTERISTICS.118TYP SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-.M0H1F4M(1800.-M3H5F)M1100-MH FM1150-MH FM1200-
Maximum Forward Voltage at 1.0A DC (3.0)TYP
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
VF
IR
0.50
0.70
0.85 0.9 0.92
0.5  
10
 
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
Dimensions in inches and (millimeters)
2012-06
2012-0
WILLAS ELERCeTvR.CONIC CO
WILLAS ELECTRONIC CORP.










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