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PDF MTDN3154C6 Data sheet ( Hoja de datos )
| Número de pieza | MTDN3154C6 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C915C6
Issued Date : 2014.05.12
Revised Date :
Page No. : 1/ 8
N-CHANNEL MOSFET (dual transistors)
MTDN3154C6 BVDSS
ID
Features
• High speed switching
• Low-voltage drive
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free lead plating and halogen-free package
RDSON(TYP)
VGS=4.5V, ID=540mA
VGS=2.5V, ID=500mA
VGS=1.8V, ID=350mA
20V
0.54A
0.30Ω
0.55Ω
1.50Ω
Equivalent Circuit
MTDN3154C6
Outline
SOT-563
D1 G2 S2
Tr1
Tr2
Pin #1 S1 G1 D2
Ordering Information
Device
MTDN3154C6-0-T1-G
Package
SOT-563
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTDN3154C6
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C915C6
Issued Date : 2014.05.12
Revised Date :
Page No. : 5/ 8
Typical Characteristics(Cont.)
Typical Transfer Characteristics
3
VDS=10V
2.5
Forward Transfer Admittance vs Drain Current
1
2
1.5 0.1
1
0.5
0
0
1
D=0.5
1 23
VGS, Gate-Source Voltage(V)
0.01
4 0.001
Transient Thermal Response Curves
VDS=10V
Ta=25°C
Pulsed
0.01 0.1
ID, Drain Current(A)
1
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*ZθJA(t)
4.RθJA=833°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTDN3154C6
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTDN3154C6.PDF ] | |
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