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PDF AO4312 Data sheet ( Hoja de datos )
| Número de pieza | AO4312 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4312
36V N-Channel MOSFET
General Description
The AO4312 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
36V
23A
< 4.5mΩ
< 6.2mΩ
Top View
D
D
D
D
SOIC-8
Bottom View
D
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
TA=25°C
Power Dissipation B TA=70°C
VGS
ID
IDM
IAS, IAR
EAS, EAR
PD
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum
36
±20
23
18
264
45
101
4.2
2.7
-55 to 150
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
25
50
12
Max
30
60
15
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: December 2010
www.aosmd.com
Page 1 of 6
1 page  
AO4312
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
100
1000
4
Rev 0: December 2010
www.aosmd.com
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AO4312.PDF ] | |
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