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1N5711W PDF даташит

Спецификация 1N5711W изготовлена ​​​​«LGE» и имеет функцию, называемую «Surface Mount Schottky Barrier Diode».

Детали детали

Номер произв 1N5711W
Описание Surface Mount Schottky Barrier Diode
Производители LGE
логотип LGE логотип 

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1N5711W Даташит, Описание, Даташиты
1N5711W
Surface Mount Schottky Barrier Diode
Voltage Range
70 Volts
250m Watts Power Dissipation
SOD-123
Features
Low forward voltage drop
Guard Ring Construction for Transient
Protection
Fast switching time
Low Reverse Capacitance
Surface mount package ideally suited for
automatic insertion
Mechanical Data
0.053(1.35)
Max.
0.022(0.55)
Typ. Min.
0.152(3.85)
0.140(3.55)
0.010(0.25)
Min.
0.112(2.85)
0.100(2.55)
Case: SOD-123, Plastic
Polarity: Cathode Band
Marking: Date Code and Type Code
Type Code: SA
Weight: 0.01 grams (approx.)
0.006(0.15)
Typ. Min.
0.067(1.70)
0.055(1.40)
0.004(0.10)
Max.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
1N5711W
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Maximum Forward Current
VRRM
VRWM
VR
VR(RMS)
IFM
70
49
15
V
V
mA
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Pd
RθJA
TJ, TSTG
250
600
-65 to + 175
mW
K/W
OC
Type Number
Reverse Breakdown Voltage
Reverse Leakage Current
IR=10uA
VR=50V
Symbol
V(BR)
IR
Min
70
-
Typ Max Units
- -V
- 200 nA
Forward Voltage Drop
Junction Capacitance
IF=1.0mA
IF=15mA
VR=0, f=1.0MHz
Reverse Recovery Time (Note 2)
VF
70
-
- 0.41 V
- 1.0
Cj - - 2.0 pF
trr - - 1.0 nS
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100Ω.
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1N5711W Даташит, Описание, Даташиты
1N5711W
Surface Mount Schottky Barrier Diode
RATINGS AND CHARACTERISTIC CURVES (1N5711W)
FIG.1- TYPICAL FORWARD CHARACTERISTIC
VARIATIONS FOR PRIMARY CONDUCTION
mA
10
5
2
1
5
2
0.1
5
2
0.01
0
0.5 1V
VF, INSTANTANEOUS FWD VOLTAGE (V)
FIG.2- TYP. JUNCTION CAPACITANCE VS
REVERSE VOLTAGE
pF
2
Tj =25OC
1
0
0 10 20 30 40 50V
VR, REVERSE VOLTAGE (V)
FIG.3- TYPICAL REVERSE CHARACTERISTICS
A
100
5 125OC
2
10
5
75OC
2
1
5
2
0.1 25OC
5
2
0.01
0
10 20 30 40 50V
VR, REVERSE VOLTAGE (V)
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Номер в каталогеОписаниеПроизводители
1N5711SMALL SIGNAL SCHOTTKY DIODESTMicroelectronics
STMicroelectronics
1N5711SCHOTTKY BARRIER DIODESCompensated Deuices Incorporated
Compensated Deuices Incorporated
1N5711SCHOTTKY BARRIER SWITCHING DIODEDiodes Incorporated
Diodes Incorporated
1N5711Schottky DiodesGeneral Semiconductor
General Semiconductor

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