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AP0103GP-HF PDF даташит

Спецификация AP0103GP-HF изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AP0103GP-HF
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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AP0103GP-HF Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP0103GP-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower On-resistance
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
D
S
Description
AP0103 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal resistance and
low package cost contribute to the worldwide popular package.
BVDSS@Tj=125oC
RDS(ON)
ID
40V
2.99mΩ
220A
G
D
S
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
VDS@Tj=125oC
VGS
ID@TC=25
ID@TC=25
ID@TC=100
IDM
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V3
Pulsed Drain Current1
PD@TC=25
PD@TA=25
TSTG
TJ
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
+20
220
80
80
320
250
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
0.5
62
Units
/W
/W
1
201304121









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AP0103GP-HF Даташит, Описание, Даташиты
AP0103GP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=40A
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=40A
VDS=32V, VGS=0V
VGS= +20V, VDS=0V
ID=40A
VDS=32V
VGS=4.5V
VDS=20V
ID=40A
RG=3.3Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
38 - - V
- - 2.99 m
- - 4.2 mΩ
1 - 3V
- 108 -
S
- - 25 uA
- - +100 nA
- 30 48 nC
- 2.3 - nC
- 20 - nC
- 10 - ns
- 80 - ns
- 40 - ns
- 85 - ns
- 2760 4410 pF
- 605 - pF
- 210 - pF
- 1.4 2.8
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=40A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 32 - ns
- 24 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2









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AP0103GP-HF Даташит, Описание, Даташиты
300
T C =25 o C
250
200
10V
7.0V
6.0V
5.0V
V G = 4.0V
150
100
50
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
I D = 30A
T C = 25 o C
3.6
3.2
2.8
2.4
2
3 4 5 6 7 8 9 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
30
T j =150 o C
T j =25 o C
20
10
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP0103GP-HF
200
T C =150 o C
160
120
10V
7.0V
6.0V
5.0V
V G =4.0V
80
40
0
0 2 4 6 8 10
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =40A
V G =10V
1.6
1.2
0.8
0.4
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I D =250uA
1.6
150
1.2
0.8
0.4
0.0
-50
0
50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3










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Номер в каталогеОписаниеПроизводители
AP0103GP-HFN-CHANNEL ENHANCEMENT MODE POWER MOSFETAdvanced Power Electronics
Advanced Power Electronics

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