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AP02N60I-HF PDF даташит

Спецификация AP02N60I-HF изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AP02N60I-HF
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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AP02N60I-HF Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP02N60I-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Avalanche Test
Fast Switching Characteristic
D
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
S
Description
AP02N60 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
BVDSS
RDS(ON)
ID4
600V
8Ω
2A
G DS
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V4
Drain Current, VGS @ 10V4
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
Storage Temperature Range
Operating Junction Temperature Range
600
+30
2
1.26
3.6
22
80
-55 to 150
-55 to 150
V
V
A
A
A
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
5.7
65
Unit
/W
/W
1
201502255









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AP02N60I-HF Даташит, Описание, Даташиты
AP02N60I-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS=0V, ID=1mA
VGS=10V, ID=1A
VDS=VGS, ID=250uA
VDS=20V, ID=1A
VDS=600V, VGS=0V
VGS=+30V, VDS=0V
ID=2A
VDS=480V
VGS=10V
VDS=300V
ID=2A
RG=10Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
.
Min. Typ. Max. Units
600 -
--
-V
8Ω
2 - 4V
- 0.2 -
S
- - 100 uA
- - +100 nA
- 14 - nC
- 2 - nC
- 8.5 - nC
- 9.5 - ns
- 12 - ns
- 21 - ns
- 9 - ns
- 155 - pF
- 27 - pF
- 14 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage3
Test Conditions
VD=VG=0V , VS=1.5V
IS=2A, VGS=0V
Min. Typ. Max. Units
- - 2A
- - 3.6 A
- - 1.5 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=40mH , RG=25Ω
3.Pulse test
4.Ensure that the junction temperature does not exceed T Jmax..
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2









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AP02N60I-HF Даташит, Описание, Даташиты
AP02N60I-HF
1.5
T C =25 o C
1
10V
6.0V
5.5V
5.0V
0.5
V G = 4.5 V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.9
T C =150 o C
0.6
0.3
10V
6.0V
5.5V
5.0V
V G = 4.5 V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.2 3
I D =1A
1.1 V G =10V
2
.1
1
0.9
0.8
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
100
0
-50
0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
5
10
T j = 150 o C
1
T j = 25 o C
4
3
2
0.1
0
0.2 0.4 0.6 0.8
V SD (V)
1
Fig 5. Forward Characteristic of
Reverse Diode
1.2
1
-50 -25 0 25 50 75 100 125 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3










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Номер в каталогеОписаниеПроизводители
AP02N60I-HFN-CHANNEL ENHANCEMENT MODE POWER MOSFETAdvanced Power Electronics
Advanced Power Electronics

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