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PDF S-LP9435LT1G Data sheet ( Hoja de datos )
| Número de pieza | S-LP9435LT1G | |
| Descripción | P-Channel Enhancement-Mode MOSFET | |
| Fabricantes | LRC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de S-LP9435LT1G (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
VDS= -30V
RDS(ON), Vgs@-10V, Ids@-5.3A = 70mΩ
RDS(ON), Vgs@-4.5V, Ids@-4.2A = 100mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Improved Shoot-Through FOM
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
Ordering Information
Device
LP9435LT1G
S-LP9435LT1G
LP9435LT3G
S-LP9435LT3G
Marking
P94
P94
Shipping
3000/Tape&Reel
10000/Tape&Reel
LP9435LT1G
S-LP9435LT1G
3
1
2
SOT– 23 (TO–236AB)
3D
G
1 2S
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Symbol
Parameter
Limit
VDS Drain-Source Voltage
-30
VGS Gate-Source Voltage
± 20
ID Continuous Drain Current
-5.3
IDM Pulsed Drain Current 1)
-20
PD Maximum Power Dissipation
TA = 25oC
TA = 75oC
1.4
0.8
TJ, Tstg
Operating Junction and Storage Temperature Range
-55 to 150
RθJC Junction-to-Case Thermal Resistance
50
RθJA Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
90
Unit
V
A
W
oC
oC/W
Rev .O 1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet S-LP9435LT1G.PDF ] | |
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