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ACE2006M PDF даташит

Спецификация ACE2006M изготовлена ​​​​«ACE Technology» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв ACE2006M
Описание N-Channel MOSFET
Производители ACE Technology
логотип ACE Technology логотип 

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ACE2006M Даташит, Описание, Даташиты
ACE2006M
N-Channel 60-V MOSFET
Description
ACE2006M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications:
White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current b
TC=25°C
Continuous Source Current (Diode Conduction) a
Power Dissipation
TC=25°C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
60
±20
19
75
42
50
-55 to 150
Unit
V
V
A
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
Symbol Maximum Unit
RθJA
RθJC
40
°C/W
3
Notes
a. Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copper, value dependent on PC board thermal characteristics.
b. Pulse width limited by maximum junction temperature.
VER 1.1 1









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ACE2006M Даташит, Описание, Даташиты
Packaging Type
TO-252
GDS
Ordering information
ACE2006M YM + H
Halogen - free
Pb - free
YM : TO-252
ACE2006M
N-Channel 60-V MOSFET
VER 1.1 2









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ACE2006M Даташит, Описание, Даташиты
ACE2006M
N-Channel 60-V MOSFET
Electrical Characteristics
TA=25, unless otherwise specified.
Parameter
Symbol
Conditions
Static
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 uA
Gate-Body Leakage
IGSS VDS = 0 V, VGS = ±20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 48 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 55°C
On-State Drain Current
ID(on)
VDS = 5 V, VGS = 10 V
Drain-Source On-Resistance
rDS(on)
VGS = 10 V, ID = 15.2A
VGS = 4.5 V, ID = 14A
Forward Transconductance
Diode Forward Voltage
gfs
VSD
VDS = 15 V, ID = 15.2A
IS = 21 A, VGS = 0 V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 30 V, VGS = 4.5 V, ID = 15.2 A
Gate-Drain Charge
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30 V, RL = 2 Ω , ID = 15.2 A, VGEN = 10
V, RGEN = 6 Ω
Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss VDS = 15 V, VGS = 0 V, f =1 MHz
ReverseTransfer Capacitance
Crss
Note:
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Min. Typ. Max. Unit
1V
±100 nA
1 uA
25 uA
34 A
94
109
20 S
1.03 V
5.1
2.3 nC
2.0
4
9
ns
17
19
353
26 pF
14
VER 1.1 3










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Номер в каталогеОписаниеПроизводители
ACE2006MN-Channel MOSFETACE Technology
ACE Technology

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