DataSheet26.com

VN0655 PDF даташит

Спецификация VN0655 изготовлена ​​​​«Supertex» и имеет функцию, называемую «N-Channel Enhancement-Mode Vertical DMOS FETs».

Детали детали

Номер произв VN0655
Описание N-Channel Enhancement-Mode Vertical DMOS FETs
Производители Supertex
логотип Supertex логотип 

4 Pages
scroll

No Preview Available !

VN0655 Даташит, Описание, Даташиты
VN0655
VN0660
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BVDSS /
BVDGS
550V
600V
MIL visual screening available
RDS(ON)
(max)
20
20
Features
s Free from secondary breakdown
s Low power drive requirement
s Ease of paralleling
s Low CISS and fast switching speeds
s Excellent thermal stability
s Integral Source-Drain diode
s High input impedance and high gain
Applications
s Motor controls
s Converters
s Amplifiers
s Switches
s Power supply circuits
s Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
ID(ON)
(min)
0.25A
0.25A
Order Number / Package
TO-92
TO-220
Die
VN0655N3 — VN0655ND
VN0660N3 VN0660N5 VN0660ND
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
BVDSS
BVDGS
± 20V
-55°C to +150°C
300°C
7-179
SGD
TO-92
GDS
TO-220
TAB: DRAIN
Note: See Package Outline section for dimensions.









No Preview Available !

VN0655 Даташит, Описание, Даташиты
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
TO-92
0.15A
TO-220
0.75A
* ID (continuous) is limited by max rated Tj.
0.5A
1.5A
Power Dissipation
@ TC = 25°C
1W
45W
θjc
°C/W
125
5
θja
°C/W
170
70
VN0655/VN0660
IDR*
0.15A
0.75A
IDRM
0.5A
1.5A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
VGS(th)
VGS(th)
IGSS
IDSS
Parameter
Min Typ Max Unit
Drain-to-Source
Breakdown Voltage
VN0660 600
VN0655 550
V
Gate Threshold Voltage
2 4V
Change in VGS(th) with Temperature
Gate Body Leakage
-4.5 mV/°C
100 nA
Zero Gate Voltage Drain Current
10 µA
1 mA
ID(ON)
ON-State Drain Current
0.25
0.8
1.0
RDS(ON)
Static Drain-to-Source
ON-State Resistance
17
16 20
RDS(ON)
Change in RDS(ON) with Temperature
0.75
GFS Forward Transconductance
50 75
CISS Input Capacitance
85 130
COSS
Common Source Output Capacitance
25 75
CRSS
Reverse Transfer Capacitance
10 20
td(ON)
Turn-ON Delay Time
10
tr Rise Time
10
td(OFF)
Turn-OFF Delay Time
20
tf Fall Time
13
VSD Diode Forward Voltage Drop
1.8
trr Reverse Recovery Time
300
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
%/°C
m
pF
ns
V
ns
Conditions
VGS = 0V, ID = 2mA
VGS = VDS , ID = 2mA
VGS = VDS , ID = 2mA
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
VGS = 5V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 5V, ID = 100mA
VGS = 10V, ID = 100mA
VGS = 10V, ID = 100mA
VDS = 25V, ID = 100mA
VGS = 0V, VDS = 25V
f = 1 MHz
VDD = 25V,
ID = 0.25A
RGEN = 25
VGS = 0V, ISD = 100mA
VGS = 0V, ISD = 100mA
Switching Waveforms and Test Circuit
10V
INPUT
0V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
7-180
PULSE
GENERATOR
Rgen
INPUT
VDD
RL
OUTPUT
D.U.T.









No Preview Available !

VN0655 Даташит, Описание, Даташиты
Typical Performance Curves
Output Characteristics
1.8
1.4
VGS = 6V to 10V
1.0
5V
0.6
4V
0.2
0
3V
10 20 30 40 50
VDS (volts)
Transconductance vs. Drain Current
0.1
TA = -55°C
0.08
TA = 25°C
0.06
TA = 150°C
0.04
0.02
VDS = 25V
0
0 0.5
ID (amperes)
1.0
Maximum Rated Safe Operating Area
10
1.0 TO-220 (pulsed)
TO-220 (DC)
0.1 TO-92 (DC)
TC = 25°C
0.01
1
10 100
VDS (volts)
1000
7-181
VN0655/VN0660
Saturation Characteristics
1.0
VGS = 6V to 10V
5V
0.5 4V
3V
0
0 4 8 12 16 20
VDS (volts)
Power Dissipation vs. Case Temperature
50
TO-220
40
30
20
10
TO-92
0
0 25
50 75 100 125 150
TC (°C)
Thermal Response Characteristics
1.0
TO-220
PD = 15W
0.8 TC = 25°C
0.6
0.4
0.2
0
0.001
0.01
0.1
tp (seconds)
TO-92
PD = 1W
TC = 25°C
1 10










Скачать PDF:

[ VN0655.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
VN0650N-Channel Enhancement-Mode Vertical DMOS FETsSupertex
Supertex
VN0655N-Channel Enhancement-Mode Vertical DMOS FETsSupertex
Supertex

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск