DataSheet26.com

2N6301 PDF даташит

Спецификация 2N6301 изготовлена ​​​​«Savantic» и имеет функцию, называемую «Silicon NPN Power Transistors».

Детали детали

Номер произв 2N6301
Описание Silicon NPN Power Transistors
Производители Savantic
логотип Savantic логотип 

3 Pages
scroll

No Preview Available !

2N6301 Даташит, Описание, Даташиты
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6300 2N6301
DESCRIPTION
·With TO-66 package
·DARLINGTON
·Low collector saturation voltage
·Complement to type 2N6298/6299
APPLICATIONS
·General purpose power amplifier and
low frequency switching applications
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N6300
2N6301
VCEO
Collector-emitter voltage
2N6300
2N6301
VEBO
IC
ICM
IB
PT
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
VALUE
60
80
60
80
5
8
16
0.12
75
200
-65~200
UNIT
V
V
V
A
A
A
W
MAX
2.33
UNIT
/W









No Preview Available !

2N6301 Даташит, Описание, Даташиты
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6300 2N6301
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6300
2N6301
IC=0.1A ; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=16mA
VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=80mA
VBEsat
Base-emitter saturation voltage
IC=8A; IB=80mA
VBE Base -emitter on voltage
IC=4A ; VCE=3V
2N6300
VCE=60V; VBE(off)=1.5V
TC=150
ICEX Collector cut-off current
2N6301
VCE=80V; VBE(off)=1.5V
TC=150
2N6300 VCE=30V; IB=0
ICEO Collector cut-off current
2N6301 VCE=40V; IB=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=4A ; VCE=3V
hFE-2
DC current gain
IC=8A ; VCE=3V
COB Output capacitance
IE=0 ; VCB=10V;f=0.1MHz
MIN TYP. MAX UNIT
60
V
80
2.0 V
3.0 V
4.0 V
2.8 V
0.5
5.0
mA
0.5
5.0
0.5 mA
2.0 mA
750 18000
100
200 pF
2









No Preview Available !

2N6301 Даташит, Описание, Даташиты
SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2N6300 2N6301
Fig.2 Outline dimensions
3










Скачать PDF:

[ 2N6301.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
2N6300POWER TRANSISTORS(8A/ 75W)Mospec Semiconductor
Mospec Semiconductor
2N6300DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORSBoca Semiconductor Corporation
Boca Semiconductor Corporation
2N6300Trans Darlington NPN 60V 8A 3-Pin(2+Tab) TO-66New Jersey Semiconductor
New Jersey Semiconductor
2N6300Trans Darlington NPN 60V 8A 3-Pin(2+Tab) TO-66New Jersey Semiconductor
New Jersey Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск