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Datasheet 2N6283 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N6283 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 2N6282 2N6283 2N6284 NPN 2N6285 2N6286 2N6287 PNP
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6282, 2N6285 series devices are complementary silicon monolithic Darlington transistors, manufactured by the epitaxial b | Central Semiconductor | transistor |
2 | 2N6283 | NPN Darlington Power Silicon Transistor NPN Darlington Power Silicon Transistor
2N6283 & 2N6284
Features
• Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/504
• TO-3 (TO-204AA) Package
Maximum Ratings
Ratings Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Base Current
Collector Current Total Power D | Aeroflex | transistor |
3 | 2N6283 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductort NPN
Darlington Complementary Silicon Power Transistors
. . . designed for general−purpose amplifier and low−frequency switching applications.
2N6283 2N6284
PNP
• High DC Current Gain @ IC = 10 Adc − • • w
2N6286 2N6287
DARLINGTON 20 AMPERE COMPL | ON Semiconductor | transistor |
4 | 2N6283 | POWER TRANSISTORS(20A/160W) A
A
A
A
| Mospec Semiconductor | transistor |
5 | 2N6283 | DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS | Boca Semiconductor Corporation | transistor |
2N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N60 | N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2N60
2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact Unisonic Technologies mosfet | | |
2 | 2N60-E | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N60-E
2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Unisonic Technologies mosfet | | |
3 | 2N6008 | Series 2N Transistors Sprague transistor | | |
4 | 2N6009 | Series 2N Transistors Sprague transistor | | |
5 | 2N6010 | Silicon Transistors Semiconductor transistor | | |
6 | 2N6027 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 2N6027 2N6028
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte Central Semiconductor transistor | | |
7 | 2N6027 | Programmable Unijunction Transistor 2N6027, 2N6028
Preferred Device
Programmable Unijunction Transistor
Programmable Unijunction Transistor Triggers
Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigge ON Semiconductor transistor | |
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Número de pieza | Descripción | Fabricantes | |
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