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DMG6602SVTQ PDF даташит

Спецификация DMG6602SVTQ изготовлена ​​​​«Diodes» и имеет функцию, называемую «COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв DMG6602SVTQ
Описание COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Производители Diodes
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DMG6602SVTQ Даташит, Описание, Даташиты
DMG6602SVTQ
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V(BR)DSS
Q1 30V
Q2 -30V
RDS(on)
60mΩ @ VGS = 10V
100mΩ @ VGS = 4.5V
95mΩ @ VGS = -10V
140mΩ @ VGS = -4.5V
ID
TA = +25°C
3.4A
2.7A
-2.8A
-2.3A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Backlighting
DC-DC Converters
Power Management Functions
TSOT26
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (Approximate)
Q1
D1
Q2
D2
G1 1
S2 2
6 D1
5 S1
G1
G2
Top View
G2 3
4 D2
Top View
S1
N-Channel
S2
P-Channel
Ordering Information (Note 5)
Notes:
Part Number
DMG6602SVTQ-7
DMG6602SVTQ-13
Case
TSOT26
TSOT26
Packaging
3,000 / Tape & Reel
10,000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
66C
66C = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2010
X
2011
Y
Month
Code
Jan Feb
12
DMG6602SVTQ
Document number: DS37643 Rev. 1 - 2
2012
Z
Mar
3
2013
A
Apr
4
2014
B
2015
C
2016
D
2017
E
May
5
Jun
6
Jul Aug Sep
78
9
1 of 10
www.diodes.com
2018
F
Oct
O
2019
G
2020
H
Nov Dec
ND
December 2014
© Diodes Incorporated









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DMG6602SVTQ Даташит, Описание, Даташиты
DMG6602SVTQ
Maximum Ratings Q1 (@TA = +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = 10V
Steady
State
Continuous Drain Current (Note 7) VGS = 4.5V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (Note 5)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
Value
30
±20
3.4
2.7
2.7
2.2
1.5
25
Unit
V
V
A
A
A
A
Maximum Ratings Q2 (@TA = +25°C unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = -10V
Steady
State
Continuous Drain Current (Note 7) VGS = -4.5V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (Note 7)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
ID
Value
-30
±20
-2.8
-2.4
-2.3
-2.1
-1.5
-20
Unit
V
V
A
A
A
A
Thermal Characteristics
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady State
t<10s
TA = +25°C
TA = +70°C
Steady State
t<10s
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
Value
0.84
0.52
155
109
1.27
0.8
102
71
34
-55 to +150
Units
W
°C/W
W
°C/W
°C
DMG6602SVTQ
Document number: DS37643 Rev. 1 - 2
2 of 10
www.diodes.com
December 2014
© Diodes Incorporated









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DMG6602SVTQ Даташит, Описание, Даташиты
DMG6602SVTQ
Electrical Characteristics Q1 NMOS (@ TA = +25°C unless otherwise stated.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
Min
30
-
-
1.0
-
Typ Max
--
- 1.0
- ±100
- 2.3
38 60
55 100
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-4-
- 0.8 1
- 290 400
- 40 80
- 40 80
- 1.4 -
- 46
- 9 13
- 1.2 -
- 1.5 -
-3-
-5-
- 13 -
-3-
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit
V
µA
nA
V
mΩ
S
V
pF
Ω
nC
ns
Test Condition
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 3.1A
VGS = 4.5V, ID = 2A
VDS = 5V, ID = 3.1A
VGS = 0V, IS = 1A
VDS = 15V, VGS = 0V,
f = 1.2MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 15V, VGS = 4.5V, ID = 3.1A
VDS = 15V, VGS = 10V, ID = 3A
VGS = 10V, VDS = 15V,
RG = 3Ω, RL = 4.7Ω
10.0
8.0
6.0
4.0
2.0
0.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
10
VDS= 5.0V
8
6
4
2
0
0 12 34 5
VGS, GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
DMG6602SVTQ
Document number: DS37643 Rev. 1 - 2
3 of 10
www.diodes.com
December 2014
© Diodes Incorporated










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