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PDF DMG5802LFX Data sheet ( Hoja de datos )

Número de pieza DMG5802LFX
Descripción DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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DMG5802LFX
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
24V
RDS(ON)
15m@ VGS = 4.5V
20m@ VGS = 2.5V
ID
TA = +25°C
6.5A
5.6A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power management functions
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 3kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: W-DFN5020-6
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.03 grams (approximate)
G1 S1 S1
W-DFN5020-6
D1/D2
D1 D2
G1 G2
ESD PROTECTED TO 3kV
Top View
Bottom View
G2 S2 S2
Top View
Pin-Out
S1 S2
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMG5802LFX-7
Case
W-DFN5020-6
Packaging
3000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ME = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
YM M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
2011
Y
Feb Mar
23
2012
Z
Apr
4
DMG5802LFX
Document number: DS35009 Rev. 5 - 2
2013
A
May
5
2014
B
Jun Jul
67
1 of 6
www.diodes.com
2015
C
Aug
8
2016
D
Sep
9
2017
E
Oct Nov
ON
2018
F
Dec
D
November 2013
© Diodes Incorporated

1 page




DMG5802LFX pdf
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
DMG5802LFX
D = 0.9
RJA(t) = r(t) * RJA
RJA = 122°C/W
P(pk)
t1
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1/t2
0.001
0.01 0.1
1
t1, PULSE DURATION TIME (s)
Fig. 13 Transient Thermal Response
10
100
1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
A1
D
e
D2
Pin 1 ID
E
A3
E2
L
Zb
W-DFN5020-6
Dim Min Max Typ
A 0.75 0.85 0.80
A1 0 0.05 0.02
A3 
 0.15
b 0.20 0.30 0.25
D 1.90 2.10 2.00
D2 1.40 1.60 1.50
e   0.50
E 4.90 5.10 5.00
E2 2.80 3.00 2.90
L 0.35 0.65 0.50
Z   0.375
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
X
C
X1 Y2
X2
G
Y3
Dimensions Value (in mm)
C 0.50
G 0.35
X 0.35
X1 0.90
X2 1.80
Y 0.70
Y2 1.60
Y3 3.20
DMG5802LFX
Document number: DS35009 Rev. 5 - 2
5 of 6
www.diodes.com
November 2013
© Diodes Incorporated

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