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PDF DMG4822SSD Data sheet ( Hoja de datos )
| Número de pieza | DMG4822SSD | |
| Descripción | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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DMG4822SSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
30V
RDS(ON) max
20mΩ @ VGS = 10V
ID max
TA = +25°C
10A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
DC-DC Converters
Analog Switch
Features and Benefits
Low On-Resistance
Low Input Capacitance
Low Input/Output leakage
Low Gate Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate)
S1 D1
G1 D1
S2 D2
G2 D2
TOP VIEW
Internal Schematic
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
Ordering Information (Note 4)
Notes:
Part Number
DMG4822SSD-13
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
G4822SD
YY WW
14
Chengdu A/T Site
85
G4822SD
YY WW
14
Shanghai A/T Site
= Manufacturer’s Marking
G4822SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
DMG4822SSD
Document number: DS35403 Rev. 2 - 2
1 of 7
www.diodes.com
February 2014
© Diodes Incorporated
1 page  
2
1.8
1.6
1.4
Vth (V) @ ID=250µA
1.2
Vth (V) @ ID=1mA
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10000
1000
IDSS(nA) Ave @ 150°C
IDSS(nA) Ave @ 125°C
100
IDSS(nA) Ave @ 85°C
10
IDSS(nA) Ave @ 25°C
1
0 5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
10
VDS=15V, ID=10A
8
DMG4822SSD
20
18
16
14
12
10
8
VSD(V)@TA=25°C
6
4
2
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig.8 Diode Forward Voltage vs. Current
1000
Ciss Ave(pF)
100
Coss Ave(pF)
Crss Ave(pF)
f=1MHz
10
0 4 8 12 16
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
20
6
4
2
0
0 2 4 6 8 10 12
QG - (nC)
Fig. 11 Gate Charge
DMG4822SSD
Document number: DS35403 Rev. 2 - 2
5 of 7
www.diodes.com
February 2014
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DMG4822SSD.PDF ] | |
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