DMG3407SSN Datasheet PDF - Diodes
| Part Number | DMG3407SSN | |
| Description | P-CHANNEL ENHANCEMENT MODE MOSFET | |
| Manufacturers | Diodes | |
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DMG3407SSN
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-30V
RDS(ON)
50mΩ @ VGS = -10V
72mΩ @ VGS = -4.5V
ID
TA = 25°C
-4.0A
-3.3A
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead-Free Finish; RoHS compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Load Switch
• DC-DC Converters
• Power management functions
Mechanical Data
• Case: SC59
• Case Material – Molded Plastic. UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
• Terminal Connections: See Diagram
• Weight: 0.014 grams (approximate)
Drain
SC59
Gate
D
Top View
Source
Internal Schematic
GS
Pin Configuration
Ordering Information (Note 3)
Notes:
Part Number
DMG3407SSN-7
Case
SC59
Packaging
3000 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
G32
G32 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan Feb
12
2011
Y
Mar
3
2012
Z
Apr May
45
2013
A
Jun Jul
67
2014
B
Aug
8
Sep
9
2015
C
Oct
O
2016
D
Nov Dec
ND
DMG3407SSN
Document number: DS35135 Rev. 5 - 2
1 of 6
www.diodes.com
April 2012
© Diodes Incorporated
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DMG3407SSN
1
D = 0.7
D = 0.5
D = 0.3
0.1 D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
0.001
0.00001
0.0001
D = 0.9
RθJA(t) = r(t) * RθJA
RθJA = 164°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
10
100 1,000
Package Outline Dimensions
A
BC
G
H
K
N
J DL
M
SC59
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D-
- 0.95
G-
- 1.90
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
N 0.70 0.80 0.75
α 0° 8°
-
All Dimensions in mm
Suggested Pad Layout
Y
Z
X
DMG3407SSN
Document number: DS35135 Rev. 5 - 2
C
E
Dimensions
Z
X
Y
C
E
Value (in mm)
3.4
0.8
1.0
2.4
1.35
5 of 6
www.diodes.com
April 2012
© Diodes Incorporated
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for DMG3407SSN electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ DMG3407SSN.PDF Datasheet ] | |
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