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DMG2305UX PDF даташит

Спецификация DMG2305UX изготовлена ​​​​«Diodes» и имеет функцию, называемую «P-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв DMG2305UX
Описание P-CHANNEL ENHANCEMENT MODE MOSFET
Производители Diodes
логотип Diodes логотип 

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DMG2305UX Даташит, Описание, Даташиты
DMG2305UX
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-20V
RDS(ON) max
52mΩ @VGS = -4.5V
100mΩ @VGS = -2.5V
Package
SOT23
ID
TA = +25°C
-5.0A
-3.6A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Motor Control
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)
D rain
Top View
G ate
S o u rce
Internal Schematic
D
GS
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMG2305UX-7
DMG2305UX-13
Compliance
Standard
Standard
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
23X
23X = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2009
W
Jan Feb
12
2010
X
Mar
3
2011
Y
Apr May
45
2012
Z
Jun Jul
67
2013
A
Aug
8
Sep
9
2014
B
Oct
O
2015
C
Nov Dec
ND
DMG2305UX
Document number: DS36196 Rev. 4 - 2
1 of 5
www.diodes.com
April 2015
© Diodes Incorporated









No Preview Available !

DMG2305UX Даташит, Описание, Даташиты
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Pulsed Drain Current (Note 6)
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
DMG2305UX
Value
-20
±8
-4.2
-3.3
-5.0
-4.0
-10
Units
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady State
t<10s
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
1.4
90
64
33
-55 to +150
Unit
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
TJ = +25°C
BVDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS(ON)
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-20
-0.5
Typ
40
52
68
9
808
85
77
15.2
10.2
1.3
2.2
10.8
13.7
79.3
34.7
Max
-1.0
±100
-0.9
52
100
200
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing
Unit
Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -20V, VGS = 0V
nA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -4.2A
mVGS = -2.5V, ID = -3.4A
VGS = -1.8V, ID = -2A
S VDS = -5V, ID = -4A
pF
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
pF
VGS = 0V, VDS = 0V, f = 1.0MHz
nC
nC VGS = -4.5V, VDS = -4V,
nC ID = -3.5A
ns
ns VDS = -4V, VGS = -4.5V,
ns RG = 6, ID = -1A
ns
DMG2305UX
Document number: DS36196 Rev. 4 - 2
2 of 5
www.diodes.com
April 2015
© Diodes Incorporated









No Preview Available !

DMG2305UX Даташит, Описание, Даташиты
DMG2305UX
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
0.1
VGS = -8.0V
VGS = -4.5V
VGS = -3.0V
VGS = -2.0V
VGS = -2.5V
VGS = -1.8V
VGS = -1.5V
VGS = -1.2V
1234
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
0.08
0.06
VGS = -2.5V
0.04
0.02
VGS = -4.5V
20
VDS = -5.0V
15
10
TA = -55°C
TA = 25°C
TA = 85°C
TA = 150°C
TA = 125°C
5
0
0 0.5
1 1.5
2 2.5
3
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.08
0.07
VGS = -4.5V
0.06
0.05
0.04
TA = 125°C TA = 150°C
TA = 85°C
TA = 25°C
0.03
TA = -55°C
0.02
0.01
0
0
1.6
1.4
1.2
5 10 15
-ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS = -2.5V
ID = -5.0A
20
VGS = -4.5V
ID = -10A
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 5 On-Resistance Variation with Temperature
0
0 5 10 15 20
-ID, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
0.1
0.09
0.08
0.07
0.06
VGS = -2.5V
ID = -5A
0.05
0.04
VGS = -4.5V
ID = -10A
0.03
0.02
0.01
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMG2305UX
Document number: DS36196 Rev. 4 - 2
3 of 5
www.diodes.com
April 2015
© Diodes Incorporated










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