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DMC6070LND PDF даташит

Спецификация DMC6070LND изготовлена ​​​​«Diodes» и имеет функцию, называемую «COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв DMC6070LND
Описание COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Производители Diodes
логотип Diodes логотип 

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DMC6070LND Даташит, Описание, Даташиты
Product Summary
Device
Q1
Q2
V(BR)DSS
60V
-60V
RDS(ON) max
85m@ VGS = 10V
120m@ VGS = 4.5V
150m@ VGS = -10V
250m@ VGS = -4.5V
DMC6070LND
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
POWERDI®
Features
ID max
TA = +25°C
3.1A
2.7A
-2.4A
-1.8A
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
Power Management Functions
Analog Switch
Mechanical Data
Case: POWERDI®3333-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
POWERDI3333-8
Pin 1
S1 G1S2G2
D1
Equivalent Circuit
D2
G1 G2
D1 D1D2 D2
S1
S2
Top View
Bottom View
N-Channel MOSFET
P-Channel MOSFET
Ordering Information (Note 4)
Notes:
Part Number
DMC6070LND-7
DMC6070LND-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
C60A
C6A = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 15 for 2015)
WW = Week Code (01 to 53)
POWERDI is a registered trademark of Diodes Incorporated.
DMC6070LND
Document number: DS38051 Rev. 2 - 2
1 of 12
www.diodes.com
September 2015
© Diodes Incorporated









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DMC6070LND Даташит, Описание, Даташиты
Maximum Ratings Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
DMC6070LND
Value
60
±20
3.1
2.5
3.9
3.1
2
15
Unit
V
V
A
A
A
A
Maximum Ratings Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -10V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
Value
-60
±20
-2.4
-1.9
-2.9
-2.3
-2
-12
Unit
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady state
t<10s
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
1.4
91
60
32
-55 to +150
Note:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
Unit
W
°C/W
°C
DMC6070LND
Document number: DS38051 Rev. 2 - 2
2 of 12
www.diodes.com
September 2015
© Diodes Incorporated









No Preview Available !

DMC6070LND Даташит, Описание, Даташиты
DMC6070LND
Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
Static Drain-Source On-Resistance
RDS(ON)
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
Min
60
1
Typ
60
72
3.7
0.7
731
34
23
1.3
11.5
5.2
2.1
1.5
9.6
11
61
21
Max
1
±100
3
85
120
1.2
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 60V, VGS = 0V
nA VGS = ±16V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 1.5A
VGS = 4.5V, ID = 0.5A
S VDS = 5V, ID = 1.5A
V VGS = 0V, IS = 3A
pF
pF VDS = 20V, VGS = 0V,
f = 1MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 30V, ID = 3A
nC
ns
ns VGS = 10V, VDS = 30V,
ns RG = 50, RL = 20
ns
DMC6070LND
Document number: DS38051 Rev. 2 - 2
3 of 12
www.diodes.com
September 2015
© Diodes Incorporated










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