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DMC6040SSD PDF даташит

Спецификация DMC6040SSD изготовлена ​​​​«Diodes» и имеет функцию, называемую «COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв DMC6040SSD
Описание COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Производители Diodes
логотип Diodes логотип 

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DMC6040SSD Даташит, Описание, Даташиты
DMC6040SSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
Q1
N-Channel
Q2
P-Channel
V(BR)DSS
60V
-60V
RDS(on) max
40mΩ @ VGS = 10V
55mΩ @ VGS = 4.5V
110mΩ @ VGS = -10V
130mΩ @ VGS = -4.5V
ID
TA = +25°C
6.5 A
5.6 A
-3.9 A
-3.6 A
Features and Benefits
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
DC-DC Converters
Power Management Functions
Backlighting
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.074 grams (approximate)
SO-8 D1 D2
Pin1
Top View
S1 D1
G1 D1
S2 D2 G1
G2
G2
Top View
Pin Configuration
D2
S1
Q1 N-Channel MOSFET
S2
Q2 P-Channel MOSFET
Ordering Information (Note 4)
Notes:
Part Number
DMC6040SSD-13
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
C6040SD
YY WW
14
Chengdu A/T Site
DMC6040SSD
Document number: DS36829 Rev. 1 - 2
85
C6040SD
YY WW
14
Shanghai A/T Site
= Manufacturer’s Marking
C6040SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14= 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 of 9
www.diodes.com
June 2014
© Diodes Incorporated









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DMC6040SSD Даташит, Описание, Даташиты
DMC6040SSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
t<10s
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Q1
60
±20
5.1
4.1
6.5
5.2
2.1
28
17.2
14.7
Q2
-60
±20
-3.1
-2.5
-3.9
-3.1
-2.1
-19
-17.6
15.4
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady state
t < 10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.24
0.8
101
61
1.56
1.0
80
49
14.7
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics N-Channel Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min
60
1
Typ
33
37
0.7
1130
69
42
1.7
20.8
9.4
3.3
3.0
3.6
1.8
20.1
4.3
14.2
7.5
Max
1
±100
3
40
55
1.2
Unit
V
µA
nA
V
m
V
pF
Ω
nC
nS
nS
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting TA = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Test Condition
VGS = 0V, ID = 250µA
VDS = 48V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 8A
VGS = 4.5V, ID = 5A
VGS = 0V, IS = 1A
VDS = 15V, VGS = 0V f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = 30V, ID = 4.3A
VGS = 10V, VDD = 30V, RG = 6Ω,
ID = 4.3A
IS = 4.3A, dI/dt = 100A/μs
IS = 4.3A, dI/dt = 100A/μs
DMC6040SSD
Document number: DS36829 Rev. 1 - 2
2 of 9
www.diodes.com
June 2014
© Diodes Incorporated









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DMC6040SSD Даташит, Описание, Даташиты
DMC6040SSD
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0 0
0.05
VGS = 10V
VGS = 5.0V
VGS = 4.5V
VGS = 4.0V
VGS = 3.5V
VGS = 3.0V
VGS = 2.8V
12 34
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
0.045
0.04
0.035
0.03
VGS = 4.5V
VGS = 10V
0.025
0.02
0
2.4
2 4 6 8 10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2.2
2
VGS = 10V
ID = 8A
1.8
1.6
VGS = 4.5V
1.4 ID = 5A
1.2
1
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
20
18 VDS = 5.0V
16
14
12
10
8
6
4
2
01
0.09
0.08
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
1.5 2 2.5 3 3.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
VGS = 10V
TA = 150°C
4
0.07
0.06
0.05
TA = 125°C
TA = 85°C
0.04
0.03
0.02
TA = 25°C
TA = -55°C
0.01 0
2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
0.1
0.09
0.08
0.07
0.06
VGS = 4.5V
ID = 5A
0.05
0.04
0.03
VGS = 10V
ID = 8A
0.02
0.01
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
DMC6040SSD
Document number: DS36829 Rev. 1 - 2
3 of 9
www.diodes.com
June 2014
© Diodes Incorporated










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